For preparing Zn_100−xCd_xO (x = 0, 2, 4, 6 and 8 at%) bulk samples, proper quantities of ZnO (99.98% purity) and CdO (99.95% purity) were sealed in an evacuated quartz ampoule and heated at 500˚C. Continuous stirring of the melt was carried out to ensure good homogeneity. The melt was then rapidly quenched in ice water. Thin films of the considered ratios were prepared by electron beam evaporation in an Edward’s high vacuum coating unit model 306A under pressures of 5 × 10^?6 and 8 × 10^?5 Torr before and during film deposition, respectively. The films were deposited on an ultrasonically cleaned microscopic glasses held at room temperature. The thickness of the films (≈200 nm) was controlled using a digital film thickness monitor model TM 200 Maxtek. The deposition rate was ≈12.5 nm/s and then annealed in air for 1 h.

A Jasco model V-570 (UV-Visible-NIR) double beam Spectrophotometer (with photometric accuracy of ±0.002 - 0.004 Abs. and ±3% Trans.) was employed to record the transmission T and reflection R spectra over the wavelength range from 200 to 2500 nm at normal incidence. The absorption coefficient α of the films was determined directly from the spectrophotometer readings using the formula [19] :

α = 2.303 d log 10 ( 1 − R T ) (1)

where d is the film thickness, T is the transmittance and R is the reflectance of the film.

The optical energy band gap E_g was estimated from the optical measurements by analyzing the optical data with the expression for the optical absorbance, and the photon energy, hυ using the following equation:

( α h υ ) 2 = A ( h υ − E g ) (2)

where α represents the absorption coefficient, h is the Planck s constant, and A is a constant, the values of E_g were obtained by extrapolating the linear portion of the plots of ( α h υ ) 2 versus h υ to α = 0.

The refractive index n was calculated from the following equation:

n = 1 + R 1 − R ± [ ( R + 1 R − 1 ) 2 − ( 1 + k 2 ) ] 1 / 2 (3)

where k = αl/4p is the extinction coefficient and l is the incident light wavelength. In the present work, more reasonable values for n may be determined by considering the plus sign of Equation (3).

The resistivity measurements were carried out using a two-terminal configuration where the measurements were done at room temperature. Electrical contacts were made by applying silver paste over the surface of the films with a separation of 2 mm.

Figure 1 shows X-ray diffraction patterns of the as-prepared Zn_100?xCdxO (x = 0, 2, 4, 6 and 8 at%) films. For the undoped ZnO film as seen in Figure 1(a) is polycrystalline with a hexagonal close-packed crystal lattice. The film has four prominent peaks of (002), (100), (101) and (004) plane with highly preferred orientation along the (002) direction as recorded in card No. 04-0831. As the concentration of CdO increases from x = 2 to 8 at% in the as-prepared Zn_100?xCdxO thin films, the main peaks appear at 2θ = 31.635˚, 66.34˚, 36.15˚, 38.74˚, 43.029˚, and 77.076˚, which corresponded to Cd (002), (004) and Zn (002), (100), (101), (004) with highly preferred orientation along the (002) as seen in Figures 1(a)-(d). The intensity of the Cd (002) peak increases and becomes more and more prominent at x = 4 at% as shown in Figures 1(b)-(d).

The X-ray diffraction patterns of annealed Zn_100?xCdx (x = 0, 2, 4, and 8 at%) thin films at 300˚C for 1h are shown in Figures 2(a)-(d) indicate that, it possesses a polycrystalline hexagonal wurtzite structure with a preferred orientation along the ZnO₂ (200) plane at 2θ = 36.96. For x = 0.0, the peaks appear at 2θ = 33.88˚, 35.02˚, 36.96˚, 39.71˚, 43.94˚ and 77.62˚, which correspond to Zn (002), (100), ZnO (200), Zn (100), ZnO₂ (101) and (004) planes respectively as seen in Figure 2(a). Doping Cd with x = 2%, three peaks appear at 2θ = 35.02˚, 37.04˚ and 77.9˚ for Cd (100) and ZnO₂ (200), (004) respectively as shown in Figure 2(b). For x = 4% the main peaks appear at 2θ = 33.46˚, 35.17˚, 37.11˚ and 77.9˚ which corresponding to Cd (002), CdO₂ (200) and ZnO₂ (200), (004) plane respectively as clear in Figure 2(c). In additions, increasing x to 8 at%, the main peaks appear at 2θ = 32.44˚, 36.98˚, 39.06˚, 43.91˚ and 77.78˚, which corresponding to Cd (002), ZnO₂ (200), (004) and Zn (100) Zn (101) planes respectively as demonstrated in Figure 2(d). It is obvious that the crystal quality of the sample increases remarkably, and CdO (200) diffraction peak is observed, suggesting the phase segregation of CdO from the matrix phase [20] . Generally, this angular peak positions are greater than the as-prepare associated values. This trend can be ascribed to the tensile stresses that usually build in the furnace [21] . Also, the intensity ratio of ZnO and Cd peaks is decreased after annealing.

The X-ray diffraction patterns of annealed Zn_100?xCdx (x = 0, 2, 4, and 8 at%)

films at 500˚C for 1h are shown in Figures 3(a)-(d) indicating that, it possesses a polycrystalline hexagonal wurtzite structure with a preferred orientation along the ZnO (002) direction. For Figure 3(a) undoped ZnO film the main peaks

appear at 2θ = 31.50˚, 34.17˚, 35.95˚ corresponding to ZnO in the direction (100), (002) and (101) plane. For x = 2% Figure 3(b) the main peaks appear at 2θ = 31.75˚, 34.39˚ for Cd (002) and ZnO (002) respectively.

Doping Cd with x = 4% as seen in Figure 3(c) the main peaks appear at 2θ = 31.75˚, 34.39˚, 36.24˚, 38.32˚ and 72.56˚ which correspond to Cd (002), ZnO (200), ZnO (002), (101), (004) respectively. Finally, for x = 8% Figure 3(d) the main peaks appear at 2θ = 31.54˚, 32.92˚, 34.31˚, 36.04˚ and 72.46˚ relating to Cd (002), ZnO (002), (002), (101) and (004) respectively.

From above, it is clear that Zn and Cd only appeared in the X-ray diffraction of the as-prepared films, whereas, ZnO and CdO are shown after annealing at 300˚C for 1 h, besides, ZnO and Cd exists in the X-ray diffraction patterns with annealing temperature 500˚ results in

The typical UV-VIS-NIR optical transmittance and reflectance spectra of annealed films (Zn_100−xCd_x with x = 4 at%) at different annealing temperature as a function of wavelength in the range from 300 to 2500 nm are shown in Figure 4 and Figure 5 respectively. It is clear that the transmittance increases and the reflectance decreases with increasing the annealing temperature from 200˚C to 450˚C. In Figure 4, the drop-off of the values of transmission belonging to the shorter wavelengths was related to the fundamental absorption by band-to-band transition. Meanwhile, the wavelength of the absorption edge decreased with an increase in temperature of annealing.

From the transmittance data it is possible to infer the optical energy gap of the films by plotting (αhυ)² vs hυ (where α is the absorption coefficient, and hυ the photon energy) and by extrapolating the straight line portion of this plot to the energy axis. The obtained values have been plotted in Figure 6. The optical band gap E_g increases with increase in annealing temperature and found to be equal to

3.31 eV, which can be explained as follows: the unsaturated defects are gradually annealed out producing a larger number of saturated bonds leading to decreases in the density of localized states and consequently the optical gap increased [22] .

The variations of refractive index and the extinction coefficient in the visible wavelength range of (Zn_100−xCd_x with x = 4 at%) films annealed at different temperature are depicted in Figure 7. The refractive index of the films decreases with increasing the annealing temperature which can be attributed to the decrease in the packing density with annealing temperature. On the other hand, the extinction coefficient (k) decreases with increasing the annealing temperature, which can be attributed to the increase of the film transparency [23] .

The packing density P of the film can be estimated from the following equation [24] :

n f 2 = ( 1 − p ) n y 4 + ( 1 + p ) n y n s 2 ( 1 + p ) n y 2 + ( 1 − p ) n s 2 ,

where n_f is the refractive index of Zn_100−xCd_x with x = 4 at% films, n_s is the refractive index of the solid part of the film, that for single crystal n_y Is the refractive index of the voids (equals one for air) and P is the packing density. It is observable also that the extinction coefficient decreases with increasing the annealing temperature. This could be correlated to the decrease of absorption with increasing the temperature of annealing, where K = lα/4p is the absorption coefficient [25] .

The dependence of electrical properties on the temperature of annealing is shown in Figure 8. The resistivity decreases as the temperature is increased up

to 450˚C showing semiconductor behavior. The lowest resistivity value 5.3 × 10 − 5 Ω-cm has been obtained for annealed film at temperature of 450˚C. It is observable also that, the carriers mobility increased with increase in annealing temperature. This may be due to the increase of the grain size with increase in annealing temperature, and this leads to reduction of the grain boundary scattering due to charge carriers. The decrease of the electrical resistivity of annealed films is due the increase of the mobility carriers.

In order to predict the selective properties of transparent conductive coatings from the fundamental optical and electrical properties, the factor of merit can be employed φ = T m / ρ [26] where T_m is the average transmittance in the visible region and r is the electrical resistivity. Figure 9 shows the variation of the factor of merit as a function of annealing temperature. The figure indicates that the best value of annealing temperature is at 450˚C.