<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE article  PUBLIC "-//NLM//DTD Journal Publishing DTD v3.0 20080202//EN" "http://dtd.nlm.nih.gov/publishing/3.0/journalpublishing3.dtd"><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" dtd-version="3.0" xml:lang="en" article-type="research article"><front><journal-meta><journal-id journal-id-type="publisher-id">JMP</journal-id><journal-title-group><journal-title>Journal of Modern Physics</journal-title></journal-title-group><issn pub-type="epub">2153-1196</issn><publisher><publisher-name>Scientific Research Publishing</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.4236/jmp.2011.28100</article-id><article-id pub-id-type="publisher-id">JMP-6675</article-id><article-categories><subj-group subj-group-type="heading"><subject>Articles</subject></subj-group><subj-group subj-group-type="Discipline-v2"><subject>Physics&amp;Mathematics</subject></subj-group></article-categories><title-group><article-title>
 
 
  Prospects of Carbyne Applications in Microelectronics
 
</article-title></title-group><contrib-group><contrib contrib-type="author" xlink:type="simple"><name name-style="western"><surname>uri</surname><given-names>Prazdnikov</given-names></name><xref ref-type="corresp" rid="cor1"><sup>*</sup></xref></contrib></contrib-group><author-notes><corresp id="cor1">* E-mail:<email>yuriprazdnikov@yandex.ru</email></corresp></author-notes><pub-date pub-type="epub"><day>08</day><month>08</month><year>2011</year></pub-date><volume>02</volume><issue>08</issue><fpage>845</fpage><lpage>848</lpage><history><date date-type="received"><day>February</day>	<month>10,</month>	<year>2011</year></date><date date-type="rev-recd"><day>March</day>	<month>28,</month>	<year>2011</year>	</date><date date-type="accepted"><day>April</day>	<month>13,</month>	<year>2011</year></date></history><permissions><copyright-statement>&#169; Copyright  2014 by authors and Scientific Research Publishing Inc. </copyright-statement><copyright-year>2014</copyright-year><license><license-p>This work is licensed under the Creative Commons Attribution International License (CC BY). http://creativecommons.org/licenses/by/4.0/</license-p></license></permissions><abstract><p>
 
 
  We design carbyne transistor which is integrable into the existing silicon technology and can be scaled up in a rather broad range -- starting from that prepared by us (by 0.5-mkm technology) up to the monomolecular one because the key mechanism here is the inter-chain charge transfer.
 
</p></abstract><kwd-group><kwd>Carbyne</kwd><kwd> Transistor</kwd><kwd> Nanoswitch</kwd></kwd-group></article-meta></front><body><sec id="s1"><title>REFERENCES</title></sec></body><back><ref-list><title>References</title><ref id="scirp.6675-ref1"><label>1</label><mixed-citation publication-type="other" xlink:type="simple">P. R. Bandaru, C. Daraio, S. Jin and A. M. Rao, “Novel Electrical Switching Behaviour and Logic in Carbon Nanotube Y-Junctions,” Nature Materials, Vol. 4, 2005, pp. 663-666. doi:10.1038/nmat1450</mixed-citation></ref><ref id="scirp.6675-ref2"><label>2</label><mixed-citation publication-type="other" xlink:type="simple">Yu. P. Kudryavtsev, M. B. Guseva and V. G. Babaev, “Oriented Carbyne Layers,” Carbon, Vol. 30, No. 2, 1992, pp. 213-221. doi:10.1016/0008-6223(92)90082-8</mixed-citation></ref><ref id="scirp.6675-ref3"><label>3</label><mixed-citation publication-type="other" xlink:type="simple">Yu. E. Prazdnikov, A. D. Bozhko and N. D. Novikov, “Energetic Barrier Reduction at the Carbyne Film Interface,” Journal of Russian Laser Research, Vol. 26, No. 1, 2005, pp. 55-65. doi:10.1007/s10946-005-0006-4</mixed-citation></ref><ref id="scirp.6675-ref4"><label>4</label><mixed-citation publication-type="other" xlink:type="simple">J. Yao, Z.-Z. Sun, L. Zhong, D. Natelson and J. M. Tour, “Resistive Switches and Memories from Silicon Oxide”, Nano Letters, Vol. 10, 2010, pp. 4105-4110.</mixed-citation></ref></ref-list></back></article>