The n-WO₃ thin film semiconductor electrode was fabricated by a doctor blade method, and evaluated photoelectrochemically by forming the thin film on FTO substrate. Current-voltage (j-V) measurements of the WO₃ electrode was performed by illuminating it with 100 mW/cm², A.M. 1.5 Xe lamp with imposing anodic bias at 50 mV/s, which was constructed with potentiostat, Ag/ AgCl reference electrode and Pt counter electrode in 0.1 mol/l Na₂SO₄ electrolyte as shown in Figure 1. Action spectra were measured by 300 W Xe lamp filtered out UV ray (UV-33) through a monochromator.

WO₃ suspension was prepared with the WO₃ powder (Wako Pure Chemical Industries, Ltd.) at ca. 200 nm particle size, which was obtained by mixing 1 g WO₃ + 0.1 g HNO₃ (60%) + 0.2 g H₂O and a small amount of surfactant (Triton-X 100, MP Biomedicals, Inc.). The WO₃ thin film was formed by applicating the suspension with doctor blade method on FTO substrate, and was calcinated at 450˚C for 30 min in air. Furthermore finer WO₃ powder (Aldrich) was also utilized as ca. 30 - 50 nm particle size.

A ball milling was applied to prepare a finer WO₃ powder with ZrO₂ balls at 3 mm diameter. The finer WO₃ suspension was produced by mixing 6 g WO₃

powder (Aldrich) + 14 ml H₂O + 70 g ZrO₂ balls in 30 ml bottle at 24 h in the ball milling. The WO₃/FTO electrode was fabricated by applicating the suspension on the FTO substrate at 450˚C for 30 min sintering in air similarly.

The j-V curves were shown about WO₃/FTO electrode under dark, illumination and illumination in adding methanol as a reducing agent in Figure 2, which obtained anodic photocurrent, and indicated water photooxidation. The photocurrent in the presence of methanol was about twice and means giving knowledge as following sentences. Photooxidation of methanol was known to two processes for electron transfer at direction and secondary. In the case of the direct process, methanol adsorbed on the WO₃ surface reacts with hole [15,16].

The hole makes photooxidaton of methanol proceed preferentially in comparison to that of water. Hence recombination between electrons and holes is prevented efficiently, and the generation of ∙CH₂OH radical caused injection of electrons to conduction band in WO₃ to indicate enough negative redox potential E₀(∙CH₂OH/CH₂OH) = −0.97 V in following equation, and double photocurrent is observed.

The electron transfer corresponds with the j-V curves in Figure 2. In addition, the secondary electron transfer by electrolyte diffused into WO₃ thin film etc. except the photocurrent would not occur not to decrease the photocurrent remarkably in the absence of methanol [15,16]. Consequently, the fabricated WO₃/FTO electrode would show good semiconductor properties for water photooxidation.

Furthermore, WO₃/FTO electrode based on a finer WO₃ powder at 30 - 50 nm diameter (Aldrich) was evaluated as shown in Figure 3. The photocurrent increased

as compared with that of the WO₃/FTO electrode based on the previous WO₃ powder, which would suggest that carrier transfer was faster to be deposited with high density and homogeneous. Hence, the finer powder will be required to obtain the excellent semiconductor properties.

We attempted fabrication of excellent WO₃/FTO electrode by a ball milling to prepare most homogeneous WO₃ suspension from the WO₃ powder at 30 - 50 nm diameter (Aldrich) without the surfactant. The suspendsion was markedly homogeneous without separation or precipitation. The j-V curves of the WO₃/FTO electrode indicated increase of photocurrent in the presence of methanol particularly in Figure 4. The results will suggest that the fabrication method by utilizing the ball milling process of WO₃ powder is very effective for the excellent semiconductor properties. Absorbance of the WO₃ thin film indicated a large absorption at short wavelength within ca. 440 nm as shown in Figure 5, and corresponded to band gap at 2.8 eV. Moreover, an action spectrum in Figure 6 also accorded with the absorption

spectrum, and the results would indicate that the ball milling method was one of valid fabrication methods to prepare the thin film for ideal photo semiconductor properties.