<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE article  PUBLIC "-//NLM//DTD Journal Publishing DTD v3.0 20080202//EN" "http://dtd.nlm.nih.gov/publishing/3.0/journalpublishing3.dtd"><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" dtd-version="3.0" xml:lang="en" article-type="research article"><front><journal-meta><journal-id journal-id-type="publisher-id">JMP</journal-id><journal-title-group><journal-title>Journal of Modern Physics</journal-title></journal-title-group><issn pub-type="epub">2153-1196</issn><publisher><publisher-name>Scientific Research Publishing</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.4236/jmp.2013.42026</article-id><article-id pub-id-type="publisher-id">JMP-27723</article-id><article-categories><subj-group subj-group-type="heading"><subject>Articles</subject></subj-group><subj-group subj-group-type="Discipline-v2"><subject>Physics&amp;Mathematics</subject></subj-group></article-categories><title-group><article-title>
 
 
  Simulation Mechanical Properties of Lead Sulfur Selenium under Pressure
 
</article-title></title-group><contrib-group><contrib contrib-type="author" xlink:type="simple"><name name-style="western"><surname>azin</surname><given-names>S. Othman</given-names></name><xref ref-type="aff" rid="aff1"><sub>1</sub></xref><xref ref-type="corresp" rid="cor1"><sup>*</sup></xref></contrib></contrib-group><aff id="aff1"><label>1</label><addr-line>Department of General Science, Faculty of Education, Soran University, Soran-Erbil, Iraq</addr-line></aff><author-notes><corresp id="cor1">* E-mail:<email>mazin.sh@soranu.com</email></corresp></author-notes><pub-date pub-type="epub"><day>05</day><month>02</month><year>2013</year></pub-date><volume>04</volume><issue>02</issue><fpage>185</fpage><lpage>190</lpage><history><date date-type="received"><day>November</day>	<month>17,</month>	<year>2012</year></date><date date-type="rev-recd"><day>December</day>	<month>19,</month>	<year>2012</year>	</date><date date-type="accepted"><day>December</day>	<month>28,</month>	<year>2012</year></date></history><permissions><copyright-statement>&#169; Copyright  2014 by authors and Scientific Research Publishing Inc. </copyright-statement><copyright-year>2014</copyright-year><license><license-p>This work is licensed under the Creative Commons Attribution International License (CC BY). http://creativecommons.org/licenses/by/4.0/</license-p></license></permissions><abstract><p>
 
 
   
   The elastic properties of lead sulfur selenium are studied using first-principles calculations. The geometry optimized structural parameters for PbS<sub>0.5</sub>Se<sub>0.5</sub> under different pressures are listed. The lattice parameter increase with increasing pressure, but enthalpy is constant. However, parameter B and Y decrease and parameter S increase with increasing pressure. The elastic constants satisfy the traditional mechanical stability conditions for these ternary mixed crystals. The elastic modulus as two functions of pressure from 0
    - 
   10 GPa are obtained. The calculated elastic constants C<sub>ij</sub> decrease but with different rates under increasing pressure. 
  
 
</p></abstract><kwd-group><kwd>PbSSe; Elastic Properties; Pressure</kwd></kwd-group></article-meta></front><body><sec id="s1"><title>1. Introduction</title><p>In both the fundamental physics and high-pressure technique, the study of the mechanical properties of materials is of crucial importance. The determination, by both experimental and theoretical simulations, of the mechanical properties under pressure is a highly challenging task. These properties are closely related to the shear rigidity of materials and correspondingly, to their elastic moduli [<xref ref-type="bibr" rid="scirp.27723-ref1">1</xref>]. The lead salts semiconductors PbS and PbSe have been subject of many experimental and theoretical works. They has been largely used in infrared detectors, as infrared lasers in fiber optics, as thermoelectric materials, in solar energy panels, and in window coatings [2,3]. One of their interesting properties is their narrow fundamental energy band gap [4,5]; that is why, these IV-VI semiconductors are useful in optoelectronic devices such as lasers and detectors [6-8].</p><p>There are also many experimental studies for the mixture of these materials, for example, Lebedev and Sluchinskaya have found the appearance of ferroelectricity in these IV-VI semiconductors [<xref ref-type="bibr" rid="scirp.27723-ref9">9</xref>]; and investigated the samples of PbS<sub>x</sub>Se<sub>y</sub>Te<sub>1</sub><sub>−x</sub><sub>−y</sub> quaternary solid solutions at low temperatures using electrical and X ray methods [<xref ref-type="bibr" rid="scirp.27723-ref10">10</xref>]; ab initio study of cubic PbS<sub>x</sub>Se<sub>1</sub><sub>−x</sub> alloys by Kacimi et al. [<xref ref-type="bibr" rid="scirp.27723-ref11">11</xref>]; Structure, electronic and optical properties of PbS<sub>1-x</sub>Se<sub>x</sub> by Labidi et al. [<xref ref-type="bibr" rid="scirp.27723-ref12">12</xref>]; the vacuum evaporated PbS<sub>1</sub><sub>−x</sub>Se<sub>x</sub> thin films were examined by Kumar et al., [<xref ref-type="bibr" rid="scirp.27723-ref13">13</xref>]; and multi-spectral PbS<sub>x</sub>Se<sub>1</sub><sub>−x</sub> photovoltaic infrared detectors [<xref ref-type="bibr" rid="scirp.27723-ref14">14</xref>] were realized by Schoolar et al.</p><p>This study was carried out to shed light on the future studies of scientists who experimentally prepare and test these alloys in laboratories, to help them in determining the change in amounts of additives in alloys, and to determine the accordance of theoretical studies with experiments and other theoretical works. The elastic properties of PbS<sub>0.5</sub>Se<sub>0.5</sub> will change under pressure, which directly influences various applications of PbS-based devices under different working conditions. Taking into account of different application conditions, the elastic properties of lead sulfide at 0 - 10 GPa are studied using first-principles calculations in our work.</p></sec><sec id="s2"><title>2. Computational Method</title><p>The first-principles calculations presented here were performed by the CASTEP program on the platform of Materials Studio, which is based on density functional theory using a plane-wave basis set for the expansion of the wave functions [15-17]. Non-local ultra-soft pseudo-potentials were used to describe the valence electrons. Generalized gradient approximation (GGA) with PBE Scheme was adopted to evaluate exchange-correlation energy. Monkhorse-pack mesh was used to select 56 k-points for bulk calculation. A plane-wave cutoff energy of 340 eV was employed throughout. It was shown that the results are well converged at this cutoff. The Pb (5d 6s 6p), S (3s 3p) and Se (3d 4s 4p) were treated as valence state. The geometries for all the systems are optimized. The minimum total energy of the structure is achieved by relaxing the internal coordinates using the Broyden-Fletcher-Goldfarb-Shanno (BFGS) algorithm. The following thresholds for converged structures are employed: energy change per atom &lt;2 &#215; 10<sup>6</sup> eV, residual force 0.5 eV/nm, stress below 0.05 GPa and the displacement of atoms during the geometry optimization 0.001 nm. The GGA method maybe underestimates the band gap energy in both semiconductors and insulators. We can estimate a multiplicative correction factor to the calculated results in order to adjust the band gap to the experimental results. However, our relative results do not include the correction factor in this paper for convenience.</p><p>The elastic constants were calculated by the finite strain method. In this method, the ground state structure is strained according to symmetry-dependent strain patterns with varying amplitudes and a subsequent calculation of the stress tensor after a re-optimization of the internal structure parameters. Further-more, the bulk modulus B and the shear modulus S were calculated from the elastic constants. Young’s modulus was then computed from these values.</p></sec><sec id="s3"><title>3. Results and Discussion</title><p>In mechanical properties, element thereof which is acted on by external forces is in a state of stress. Moreover, if the body is in equilibrium, the external stress must be exactly balanced by internal forces. In general, stress is a second rank tensor with nine components as follows [18- 21]:</p><disp-formula id="scirp.27723-formula126701"><label>(1)</label><graphic position="anchor" xlink:href="6-7501080\2c283934-9e91-4522-8669-7df9c3b43c33.jpg"  xlink:type="simple"/></disp-formula><p>In an atomistic calculation, the internal stress tensor can be obtained using the so-called virile expression</p><disp-formula id="scirp.27723-formula126702"><label>(2)</label><graphic position="anchor" xlink:href="6-7501080\7e5b5320-78b3-41fa-9dad-0be7f69c3afb.jpg"  xlink:type="simple"/></disp-formula><p>where index i runs over all particles 1 through N, m<sub>i</sub>, v<sub>i</sub> and f<sub>i</sub> denote the mass, velocity and force acting on particle i, and V<sub>0</sub> denotes the (undeformed) system volume.</p><p>Application of a stress to a body results in a change in the relative positions of particles within the body, expressed quantitatively via the strain tensor:</p><disp-formula id="scirp.27723-formula126703"><label>(3)</label><graphic position="anchor" xlink:href="6-7501080\c19c6bbf-3604-4f22-a410-942a60bb08f6.jpg"  xlink:type="simple"/></disp-formula><p>For a parallelepiped (e.g., a periodic simulation cell) characterized in some reference state by the three column vectors a<sub>0</sub>, b<sub>0</sub>, c<sub>0</sub>, and by the vectors a, b, c in the deformed state, the strain tensor is given by:</p><disp-formula id="scirp.27723-formula126704"><label>(4)</label><graphic position="anchor" xlink:href="6-7501080\880460dd-e714-4ac2-871b-653f588bd690.jpg"  xlink:type="simple"/></disp-formula><p>where h<sub>0</sub> denotes the matrix formed from the three column vectors a<sub>0</sub>, b<sub>0</sub>, c<sub>0</sub>, h denotes the corresponding matrix formed from a, b, c, T denotes the matrix transpose, and G denotes the metric tensor<img src="6-7501080\70985de3-0da3-46d1-8e85-9ff0ae40d193.jpg" />.</p><p>The elastic stiffness coefficients, relating the various components of stress and strain are defined by:</p><disp-formula id="scirp.27723-formula126705"><label>(5)</label><graphic position="anchor" xlink:href="6-7501080\b7a1b730-9fd9-407c-b909-180415abac66.jpg"  xlink:type="simple"/></disp-formula><p>where A denotes the Helmholtz free energy.</p><p>For small deformations, the relationship between the stresses and strains may be expressed in terms of a generalized Hooke’s law:</p><disp-formula id="scirp.27723-formula126706"><label>(6)</label><graphic position="anchor" xlink:href="6-7501080\3b9f15e0-3d3c-4abe-a62f-0fceab25f656.jpg"  xlink:type="simple"/></disp-formula><p>or</p><disp-formula id="scirp.27723-formula126707"><label>(7)</label><graphic position="anchor" xlink:href="6-7501080\a1403ea0-e34c-453c-aec3-4a0e9b481e2a.jpg"  xlink:type="simple"/></disp-formula><p>where S<sub>lmnk</sub> denote the compliance components. Note that in both Equations (6) and (7), the summation convention is implied. For example, s<sub>21</sub> is given in full as:</p><p><img src="6-7501080\5f963326-7e0d-4773-821e-d7549e52eb9f.jpg" /></p><p>In view of the fact that both the stress and strain tensors are symmetric, it is often convenient to simplify these expressions by making use of the Voigt vector notation. Stress is represented as:</p><disp-formula id="scirp.27723-formula126708"><label>(8)</label><graphic position="anchor" xlink:href="6-7501080\95b23208-f441-4aae-9e4e-2e45549cb0a5.jpg"  xlink:type="simple"/></disp-formula><p>For Example</p><p><img src="6-7501080\e2193a41-272a-4dfa-81b4-9773cb1eb5d8.jpg" /></p><p>while strain is represented as:</p><disp-formula id="scirp.27723-formula126709"><label>(9)</label><graphic position="anchor" xlink:href="6-7501080\31cbdc10-58a9-4069-8f37-a38030154e5c.jpg"  xlink:type="simple"/></disp-formula><p>For Example: <img src="6-7501080\c1dedf67-188e-435a-b9ee-6b33191aa737.jpg" /></p><p>The generalized Hooke’s law is thus often written as:</p><disp-formula id="scirp.27723-formula126710"><label>(10)</label><graphic position="anchor" xlink:href="6-7501080\1e99e08c-ee49-4c9f-ae04-f619ea5e68b9.jpg"  xlink:type="simple"/></disp-formula><p>Note that the 6 &#215; 6 stiffness matrix C is also symmetric, and hence a maximum of 21 coefficients is required to fully describe the stress-strain behavior of an arbitrary material. Note also that C is no longer a tensor, since it does not obey the required transformation rules.</p><p>For an isotropic material, the stress-strain behavior can be fully described by specifying only two independent coefficients. The resulting stiffness matrix may be written:</p><disp-formula id="scirp.27723-formula126711"><label>(11)</label><graphic position="anchor" xlink:href="6-7501080\9b04b3b7-0dc4-4061-99b2-f74c9c75caa1.jpg"  xlink:type="simple"/></disp-formula><p>where λ and &#181; are referred to as the Lam&#233; coefficients. For the isotropic case, Expressions used for the Young modulus Y, bulk modulus B and Shear modulus S are given as follows [16,18]:</p><disp-formula id="scirp.27723-formula126712"><label>(12)</label><graphic position="anchor" xlink:href="6-7501080\593fcdfb-f25a-4431-8fd0-7ffa8404cabb.jpg"  xlink:type="simple"/></disp-formula><disp-formula id="scirp.27723-formula126713"><label>(13)</label><graphic position="anchor" xlink:href="6-7501080\1655e7f0-0049-43bd-bc32-d2cc48fda011.jpg"  xlink:type="simple"/></disp-formula><disp-formula id="scirp.27723-formula126714"><label>(14)</label><graphic position="anchor" xlink:href="6-7501080\6a61448c-8d50-4722-9754-5c9cc2c2450f.jpg"  xlink:type="simple"/></disp-formula><p>As in the first step in calculations, the lattice constants of alloys at equilibrium are calculated by minimizing the lattice parameter of the crystal, i.e. the ratio of total energy of the crystal to its volume. The tested optimization setup convergence is shown in <xref ref-type="fig" rid="fig1">Figure 1</xref> only for Pressure = 5 GPa to save space in journal. The geometry optimized structural parameters for PbS<sub>0.5</sub>Se<sub>0.5</sub> alloys under different pressure are shown in <xref ref-type="table" rid="table1">Table 1</xref>. Here, E is the enthalpy of the system, B is the bulk modulus, S is the shear modulus and Y is the young’s modulus. These properties, which are the most interesting elastic properties for applications, are often measured for polycrystalline materials when investigating their hardness.</p><p>In <xref ref-type="table" rid="table1">Table 1</xref>, we can find that lattice parameter a and enthalpy E both constant with increasing pressure and S is the increase with increase pressure, However, parameter Y and B decrease with pressure. To our knowledge, many materials usually become metallic with increasing pressure. So, the atoms get closer, lattice parameter decreases, and thus all modulus become larger. But in the PbS<sub>0.5</sub>Se<sub>0.5</sub> alloys lattice parameter increase. So, the atoms get farther and thus modulus becomes larger, these materials become non-metallic with increasing pressure. <xref ref-type="fig" rid="fig2">Figure 2</xref> shows the increase lattice parameters with increasing pressure.</p><p><xref ref-type="fig" rid="fig3">Figure 3</xref> shows elastic modulus of PbS<sub>0.5</sub>Se<sub>0.5</sub> alloys under different pressure, S is the shear modulus, and Y is the Young’s modulus, Parameter Y smaller decrease with pressure and S is the increase with increase pressure. In</p><p><xref ref-type="table" rid="table1">Table 1</xref>. Geometry optimized structural of PbS<sub>0.5</sub>Se<sub>0.5</sub>.</p><p><img src="6-7501080\513cac97-d2bd-42b1-9b24-af5ae61857fb.jpg" /></p><p>E is the enthapy of the system, Β is bulk modulus, S is the shear modulus and Y is the young’s modulus. Ref<sup>a</sup>. [<xref ref-type="bibr" rid="scirp.27723-ref11">11</xref>], Ref<sup>b</sup>. [<xref ref-type="bibr" rid="scirp.27723-ref12">12</xref>].</p><p>the present case the bulk modulus B of PbS<sub>0.5</sub>Se<sub>0.5</sub> alloys were studied under different pressure (P = 0.5 and 10 GPa). It is seen that the compressibility, according to the decreasing value of different pressure (see <xref ref-type="fig" rid="fig4">Figure 4</xref>).</p><p>The elastic constants of solids provide a link between the mechanical and dynamical behavior of crystals, and give important information concerning the nature of the</p><p>forces operating in solids. In particular, they provide information on the stability and stiffness of materials, and their ab initio calculation requires precise methods. Since the forces and the elastic constants are functions of the first-order and second-order derivatives of the potentials, their calculation will provide a further check on the accuracy of the calculation of forces in solids. The second-order Elastic constants (C<sub>ij</sub>) are calculated by using the “volume-conserving” technique [22,23] and the findings are given in <xref ref-type="table" rid="table2">Table 2</xref>.</p><p>For a stable tetragonal structure, the six independent elastic constants C<sub>ij</sub> (C<sub>11</sub>, C<sub>12</sub>, C<sub>13</sub>, C<sub>33</sub>, C<sub>44</sub> and C<sub>66</sub>) should satisfy the well known Born-Huang criteria for stability [<xref ref-type="bibr" rid="scirp.27723-ref24">24</xref>],</p><p><img src="6-7501080\92270d17-7bd4-41bc-8504-ee3d6c8fbaf7.jpg" /></p><p>while for cubic crystals, the three independent elastic constants <img src="6-7501080\532d2a28-e467-43d9-8f31-a308c75d20f9.jpg" /> satisfy inequalities, <img src="6-7501080\f237cdc0-b996-45b2-b8da-8e322f064d7e.jpg" />, <img src="6-7501080\69f32a5e-a32b-42af-8c33-e02114a07642.jpg" />, <img src="6-7501080\e7950d31-c11f-4a3a-8d62-8dfb7e4be247.jpg" />,<img src="6-7501080\0915d9ee-2aaf-4e12-a8f8-142d1cf8e324.jpg" />.</p><p>Our results for elastic constants in <xref ref-type="table" rid="table2">Table 2</xref> obey these stability conditions for PbS<sub>0.5</sub>Se<sub>0.5</sub> alloys.</p><p><xref ref-type="table" rid="table2">Table 2</xref>. The elastic contants C<sub>ij</sub> of PbS<sub>0.5</sub>Se<sub>0.5</sub> under different pressure.</p><p><img src="6-7501080\0164f950-1193-4137-acb1-731157fdcda7.jpg" /></p><p>The elastic constants C<sub>ij</sub> are very important for some mechanical properties of PbS<sub>0.5</sub>Se<sub>0.5</sub> especially in some special application conditions such as internal strain and thermo-elastic stress. The calculated results of C<sub>ij</sub> of PbS<sub>0.5</sub>Se<sub>0.5</sub> as a function of pressure from 0 to 10 GPa are presented in <xref ref-type="table" rid="table2">Table 2</xref>. For these alloys, no experimental data are available. From this table, we find that C<sub>11</sub>, C<sub>12</sub> and C<sub>13</sub> decrease under increasing pressure. However, C<sub>33</sub>, C<sub>44</sub> and C<sub>66</sub> decrease but with different rates under increasing pressure.</p></sec><sec id="s4"><title>4. Conclusions</title><p>In present work, the elastic properties of lead sulfur selenium are investigated using first-principles calculations. The results are obtained by a first-principles method based on the GGA using plane-wave pseudo potentials. The geometry optimized structural parameters for PbS<sub>0.5</sub>Se<sub>0.5</sub> under different pressures are listed. The elastic constants satisfy the traditional mechanical stability conditions for these ternary mixed crystals. The lattice parameters increase with increasing pressure. However, parameter S is the increase with increase pressure but parameter Y and B decrease with pressure. The calculated results of C<sub>ij</sub> of PbS<sub>0.5</sub>Se<sub>0.5</sub> as a function of pressure from 0 to 10 GPa are listed. C<sub>33</sub>, C<sub>44</sub> and C<sub>66</sub> decrease with different rates under increasing pressure. However C<sub>11</sub>, C<sub>12</sub> and C<sub>33</sub> decrease under increasing pressure.</p></sec><sec id="s5"><title>5. Acknowledgements</title><p>The authors would like to thank Assistant Researcher Murad Sherzad for some helpful suggestions. This work is supported by Gazi University Research Project under Project No. 05/2008/42.</p></sec><sec id="s6"><title>REFERENCES</title></sec></body><back><ref-list><title>References</title><ref id="scirp.27723-ref1"><label>1</label><mixed-citation publication-type="other" xlink:type="simple">K. S. Badu, C. Vijayan and R. Devanathan, “Strong Quantum Confinement Effects in Polymer-Based PbS Nanostructures Prepared by Ion-Exchange Method,” Materials Letters, Vol. 58, No. 7-8, 2004, pp. 1223-1226.  
doi:10.1016/j.matlet.2003.09.012</mixed-citation></ref><ref id="scirp.27723-ref2"><label>2</label><mixed-citation publication-type="other" xlink:type="simple">E. G. See, G. P. Agrawal and N. K. Dutta, “Semiconductors Lazers,” Van Nostrand Reinhold, New York, 1993.</mixed-citation></ref><ref id="scirp.27723-ref3"><label>3</label><mixed-citation publication-type="other" xlink:type="simple">P. K. Nair, M. Ocampo and A. Fernandez, “Solar Control Characteristics of Chemically Deposited Lead Sulfide Coatings,” Solar Energy Materials, Vol. 20, No. 3, 1990, pp. 235-243. doi:10.1016/0165-1633(90)90008-O</mixed-citation></ref><ref id="scirp.27723-ref4"><label>4</label><mixed-citation publication-type="other" xlink:type="simple">R. Dalven, H. Ehrenreich, F. Seitz and D. Turnbull, “Electronic Structure of PbS, PbSe, and PbTe,” Solid State Physics, Vol. 28, 1974, pp. 179-224.  
doi:10.1016/S0081-1947(08)60203-9</mixed-citation></ref><ref id="scirp.27723-ref5"><label>5</label><mixed-citation publication-type="other" xlink:type="simple">K. Murase, “Anomalous Viscosity in Turbulent Plasma Due to Electromagnetic Instability. II,” Journal of the Physical Society of Japan, Vol. 49, 1980, pp. 725-729.  
doi:10.1143/JPSJ.49.725</mixed-citation></ref><ref id="scirp.27723-ref6"><label>6</label><mixed-citation publication-type="other" xlink:type="simple">G. Springholz, V. Holy, M. Pinczolits and G. Bauer, “Self-Organized Growth of Three-Dimensional Quantum-Dot Crystals with fcc-Like Stacking and a Tunable Lattice Constant,” Science, Vol. 282, No. 5389, 1998, pp. 734-737. doi:10.1126/science.282.5389.734</mixed-citation></ref><ref id="scirp.27723-ref7"><label>7</label><mixed-citation publication-type="other" xlink:type="simple">H. Zogg, C. Maissen, J. Masek, T. Hoshino, S. Blunier and A. N. Tiwari, “Photovoltaic Infrared Sensor Arrays in Monolithic Lead Chalcogenides on Silicon,” Semiconductor Science and Technology, Vol. 6, No. 12C, 1994, pp. C36-C41. doi:10.1088/0268-1242/6/12C/008</mixed-citation></ref><ref id="scirp.27723-ref8"><label>8</label><mixed-citation publication-type="other" xlink:type="simple">T. Seetawan and H. Wattanasarn, “First Principle Simulation Mechanical Properties of PbS, PbSe, CdTe and PbTe by Molecular Dynamics,” Procedia Engineering, Vol. 32, 2012, pp. 609-613.  
doi:10.1016/j.proeng.2012.01.1316</mixed-citation></ref><ref id="scirp.27723-ref9"><label>9</label><mixed-citation publication-type="other" xlink:type="simple">A. I. Lebedev and I. A. Sluchinskaya, “Ferroelectric Phase Transitions in IV-VI Semiconductors Associated with Off-Center Ions,” Ferroelectrics, Vol. 157, No. 1, 1994, pp. 275-280. doi:10.1080/00150199408229518</mixed-citation></ref><ref id="scirp.27723-ref10"><label>10</label><mixed-citation publication-type="other" xlink:type="simple">A. I. Lebedev and I. A. Sluchinskaya. “Low-Temperature Phase Transitions in Some Quaternary Solid Solutions of IV-VI Semiconductors,” Journal of Alloys and Compounds, Vol. 203, No. 1, 1994, pp. 51-54.  
doi:10.1016/0925-8388(94)90713-7</mixed-citation></ref><ref id="scirp.27723-ref11"><label>11</label><mixed-citation publication-type="other" xlink:type="simple">S. Kacimi, A. Zaoui, B. Abbar and B. Bouhafs, “Ab Initio Study of Cubic PbSxSe1-x Alloys,” Journal of Alloys and Compounds, Vol. 462, No. 1-2, 2008, pp. 135-141.  
doi:10.1016/j.jallcom.2007.07.068? </mixed-citation></ref><ref id="scirp.27723-ref12"><label>12</label><mixed-citation publication-type="other" xlink:type="simple">M. Labidi, H. Meradji, S. Ghemid and S. Labidi, “Structural, Electronic, Optical and Thermodynamic Properties of PbS, PbSe and Their Ternary Alloy PbS1-xSex,” Modern Physics Letters B, Vol. 25, No. 7, 2011, p. 473.  
doi:10.1142/S0217984911025729? </mixed-citation></ref><ref id="scirp.27723-ref13"><label>13</label><mixed-citation publication-type="other" xlink:type="simple">S. Kumar, M. A. M. Khan, A. S. Khan and M. Husain, “Studies on Vacuum Evaporated PbS1?xSex Thin Films,” Optical Materials, Vol. 25, No. 1, 2004, pp. 25-32.  
doi:10.1016/S0925-3467(03)00211-8 </mixed-citation></ref><ref id="scirp.27723-ref14"><label>14</label><mixed-citation publication-type="other" xlink:type="simple">R. B. Schoolar, J. D. Jensen, G. M. Black, S. Foti and A. C. Bouley, “Multispectral PbSxSe1?x and PbySn1?ySe Photovoltaic Infrared Detectors,” Infrared Physics, Vol. 20, No. 4, 1980, pp. 271-275.  
doi:10.1016/0020-0891(80)90037-8 </mixed-citation></ref><ref id="scirp.27723-ref15"><label>15</label><mixed-citation publication-type="other" xlink:type="simple">P. Hohenberg and W. Kohn, “Inhomogeneous Electron Gas,” Physical Review B, Vol. 136, 1964, pp. B864-B871.</mixed-citation></ref><ref id="scirp.27723-ref16"><label>16</label><mixed-citation publication-type="other" xlink:type="simple">W. J. Zhao, X. L. Lei, Y. L. Yan, Z. Yang and Y. H. Luo, “The Structural, Electronic and Optical Properties of InxGa1_xP Alloys,” Physica B: Physics of Condensed Matter, Vol. 405, No. 10, 2010, pp. 2357-2361.</mixed-citation></ref><ref id="scirp.27723-ref17"><label>17</label><mixed-citation publication-type="other" xlink:type="simple">W. Li and J.-F. Chen, “Electronic and Elastic Properties of PbS under Pressure,” Physica B: Condensed Matter, Vol. 405, No. 5, 2010, pp. 1279-1282.  
doi:10.1016/j.physb.2009.11.067</mixed-citation></ref><ref id="scirp.27723-ref18"><label>18</label><mixed-citation publication-type="other" xlink:type="simple">M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard and P. J. Hasnip, “First-Principles Simulation: Ideas, Illustrations and the CASTEP Code,” Journal of Physics: Condensed Matter, Vol. 14, No. 11, 2002, p. 2717.  
doi:10.1088/0953-8984/14/11/301</mixed-citation></ref><ref id="scirp.27723-ref19"><label>19</label><mixed-citation publication-type="other" xlink:type="simple">W. Kohn and L. J. Sham, “Self-Consistent Equations Including Exchange and Correlation Effects,” Physical Review, Vol. 140, No. 4A, 1965, pp. A1133-A1138.  
doi:10.1103/PhysRev.140.A1133</mixed-citation></ref><ref id="scirp.27723-ref20"><label>20</label><mixed-citation publication-type="other" xlink:type="simple">M. Othman and E. Kasap, “Ab Initio Investigation of Structural, Electronic and Optical Properties of In&lt;sub&gt;x&lt;/sub&gt;Ga&lt;sub&gt;1-x&lt;/sub&gt;As, GaAs&lt;sub&gt;1-y&lt;/sub&gt;P&lt;sub&gt;y&lt;/sub&gt; Ternary and In&lt;sub&gt;x&lt;/sub&gt;Ga&lt;sub&gt;1-x&lt;/sub&gt;As&lt;sub&gt;1-y&lt;/sub&gt;P&lt;sub&gt;y&lt;/sub&gt; Quaternary Semiconductor Alloys,” Journal of Alloys and Compounds, Vol. 496, No. 1-2, 2010, pp. 226-233.  
doi:10.1016/j.jallcom.2009.12.109? </mixed-citation></ref><ref id="scirp.27723-ref21"><label>21</label><mixed-citation publication-type="other" xlink:type="simple">B.-T. Liou, C.-Y. Lin, S.-H. Yen and Y.-K. Kuo, “First-Principles Calculation for Bowing Parameter of Wurtzite InxGa1-xN,” Optics Communications, Vol. 249, No. 1-3, 2005, pp. 217-223. doi:10.1016/j.optcom.2005.01.013? </mixed-citation></ref><ref id="scirp.27723-ref22"><label>22</label><mixed-citation publication-type="other" xlink:type="simple">A. D. Milns and D. L. Feucht, “Heterojunctions and Metal-Semiconductor Junctions,” Academic Press, New York and London, 1972.</mixed-citation></ref><ref id="scirp.27723-ref23"><label>23</label><mixed-citation publication-type="other" xlink:type="simple">N. H. Abrikosov, V. F. Bankina, L. V. Poretskaya, et al., “Semiconductor Compounds, Their Preparation and Properties. Chalcogenides of II, IV and V Group Elements of the Periodic System,” Science, Moscow, 1967.</mixed-citation></ref><ref id="scirp.27723-ref24"><label>24</label><mixed-citation publication-type="other" xlink:type="simple">B. K. Agrawal and S. Agrawal, “Ab Initio Calculation of the Electronic, Structural, and Dynamical Properties of AlAs and CdTe,” Physical Review B, Vol. 45, No. 15, 1992, pp. 8321-8327. doi:10.1103/PhysRevB.45.8321</mixed-citation></ref></ref-list></back></article>