<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE article  PUBLIC "-//NLM//DTD Journal Publishing DTD v3.0 20080202//EN" "http://dtd.nlm.nih.gov/publishing/3.0/journalpublishing3.dtd"><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" dtd-version="3.0" xml:lang="en" article-type="research article"><front><journal-meta><journal-id journal-id-type="publisher-id">MSCE</journal-id><journal-title-group><journal-title>Journal of Materials Science and Chemical Engineering</journal-title></journal-title-group><issn pub-type="epub">2327-6045</issn><publisher><publisher-name>Scientific Research Publishing</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.4236/msce.2022.102002</article-id><article-id pub-id-type="publisher-id">MSCE-115456</article-id><article-categories><subj-group subj-group-type="heading"><subject>Articles</subject></subj-group><subj-group subj-group-type="Discipline-v2"><subject>Chemistry&amp;Materials Science</subject></subj-group></article-categories><title-group><article-title>
 
 
  Crystal Phases and Chemical Stabilities of YSi&lt;sub&gt;2&lt;/sub&gt; Powders Fabricated from Low and High Purity Si and Y Powders
 
</article-title></title-group><contrib-group><contrib contrib-type="author" xlink:type="simple"><name name-style="western"><surname>Ren</surname><given-names>Matsushima</given-names></name><xref ref-type="aff" rid="aff1"><sup>1</sup></xref></contrib><contrib contrib-type="author" xlink:type="simple"><name name-style="western"><surname>Mikito</surname><given-names>Kitayama</given-names></name><xref ref-type="aff" rid="aff1"><sup>1</sup></xref><xref ref-type="corresp" rid="cor1"><sup>*</sup></xref></contrib></contrib-group><aff id="aff1"><addr-line>Department of Life, Environment, and Applied Chemistry, Fukuoka Institute of Technology, Fukuoka, Japan</addr-line></aff><pub-date pub-type="epub"><day>18</day><month>02</month><year>2022</year></pub-date><volume>10</volume><issue>02</issue><fpage>18</fpage><lpage>28</lpage><history><date date-type="received"><day>17,</day>	<month>January</month>	<year>2022</year></date><date date-type="rev-recd"><day>22,</day>	<month>February</month>	<year>2022</year>	</date><date date-type="accepted"><day>25,</day>	<month>February</month>	<year>2022</year></date></history><permissions><copyright-statement>&#169; Copyright  2014 by authors and Scientific Research Publishing Inc. </copyright-statement><copyright-year>2014</copyright-year><license><license-p>This work is licensed under the Creative Commons Attribution International License (CC BY). http://creativecommons.org/licenses/by/4.0/</license-p></license></permissions><abstract><p>
 
 
  Y-Si compounds with the composition of Y:Si = 1:2 were fabricated using Yttrium and Silicon raw powders with low and high purity in various atmospheres and temperatures. Although the latest Y-Si phase diagram shows that the 
  <em>α</em>- and 
  <em>β</em>-YSi
  <sub>2</sub> phases are the stable phases for the stoichiometric composition of Y:Si = 1:2, the current experimental results suggest that the high temperature phase with the hexagonal structure, 
  <em>β</em>-Y
  <sub>3</sub>Si
  <sub>5</sub>, would be the stable phase for this composition, and that the high temperature phase with the orthorhombic structure, 
  <em>β</em>-YSi
  <sub>2</sub>, would be the meta-stable phase with high oxygen impurity content. It was demonstrated that YSi
  <sub>2</sub> powders possess much superior chemical stability than Yttrium metal. It was found that the best dispersing solvent was 2-propanol for YSi
  <sub>2</sub> powder.
 
</p></abstract><kwd-group><kwd>YSi&lt;sub&gt;2&lt;/sub&gt;</kwd><kwd> Yttrium Silicide</kwd><kwd> Crystal Phase</kwd><kwd> Chemical Stability</kwd><kwd> Oxygen Impurity</kwd></kwd-group></article-meta></front><body><sec id="s1"><title>1. Introduction</title><p>The latest Y-Si phase diagram shown in <xref ref-type="fig" rid="fig1">Figure 1</xref> [<xref ref-type="bibr" rid="scirp.115456-ref1">1</xref>] demonstrated four congruently melting compounds, Y<sub>5</sub>Si<sub>3</sub> (melting point (m.p.) 1844˚C), Y<sub>5</sub>Si<sub>4</sub> (m.p. 1860˚C), YSi (m.p. 1878˚C) and Y<sub>3</sub>Si<sub>5</sub> (m.p. 1612˚C). In addition to these phases, there is one peritectically melting compound, YSi<sub>2</sub> (m.p. 1508˚C). The phase diagram [<xref ref-type="bibr" rid="scirp.115456-ref1">1</xref>] was calculated based on thermodynamic data [<xref ref-type="bibr" rid="scirp.115456-ref2">2</xref>], however the polymorphic transformations in Y<sub>3</sub>Si<sub>5</sub> and YSi<sub>2</sub> were not based on thermodynamic calculation but on the thermodynamic assessments [<xref ref-type="bibr" rid="scirp.115456-ref2">2</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref3">3</xref>]. Among, these five compounds, the existence of the YSi<sub>2</sub> phase had been controversial. A detailed investigation of phase equilibria and crystal structures of the compounds by methods of thermal, metallographic, x-ray phase analyses and by hardness measurement was carried out [<xref ref-type="bibr" rid="scirp.115456-ref4">4</xref>]. The existence of the compounds Y<sub>5</sub>Si<sub>3</sub>, Y<sub>5</sub>Si<sub>4</sub>, YSi, and Y<sub>3</sub>Si<sub>5</sub> was established, but the formation of YSi<sub>2</sub> was not confirmed as a stable phase. Thus, the former version of the Y-Si phase diagram [<xref ref-type="bibr" rid="scirp.115456-ref5">5</xref>] did not include the YSi<sub>2</sub> phase. Later, the method of measuring the electromotive forces (emf) of the concentration galvanic elements determined the thermodynamic functions of the formation of the Y-Si compounds, and all five compounds were confirmed [<xref ref-type="bibr" rid="scirp.115456-ref6">6</xref>]. The standard enthalpies of formation for some 4d transition metal silicides have been measured by high temperature direct synthesis calorimetry at 1473 K, and the YSi<sub>2</sub> was also confirmed as a stable phase [<xref ref-type="bibr" rid="scirp.115456-ref7">7</xref>].</p><p>Early works regarding rare-earth disilicides [<xref ref-type="bibr" rid="scirp.115456-ref8">8</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref9">9</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref10">10</xref>] revealed that YSi<sub>2</sub> was dimorphic, crystallizing in the hexagonal system (AlB<sub>2</sub> type) at low temperatures (β-YSi<sub>2</sub>) and in the orthorhombic system (distorted form of the tetragonal ThSi<sub>2</sub> structure) at higher temperatures (α-YSi<sub>2</sub>), which was reported that α-YSi<sub>2</sub> transformed to β-YSi<sub>2</sub> at 450˚C [<xref ref-type="bibr" rid="scirp.115456-ref9">9</xref>]. However, the latest Y-Si phase diagram [<xref ref-type="bibr" rid="scirp.115456-ref1">1</xref>] shows the opposite designations for dimorphic YSi<sub>2</sub>, the low and high temperature phases are α-YSi<sub>2</sub> with the hexagonal crystal structure (space group: P6/mmm, AlB<sub>2</sub> type) and β-YSi<sub>2</sub> with the orthorhombic crystal structure (space group: I4<sub>1</sub>/amd, distorted form of the tetragonal ThSi<sub>2</sub> type), respectively, and the phase transformation occurs at much higher temperature, 1242˚C. This apparent contradiction would be due to the oxygen impurity derived from the raw</p><p>metal powders. Even though the stoichiometric mixture of Y:Si = 1:2, was used for preparing the compound, partial oxidation of raw metal powders, especially that of Yttrium metal with much higher chemical activity, would make Yttrium metal to the mixture of Y and Y<sub>2</sub>O<sub>3</sub>. Also, high purity Si metals, even if the semi-conductor grades were used, always contain oxygen impurity, since only metal impurities would be accounted for those applications. Thus, the vaporization of SiO at high temperature according to the chemical reaction (1) and/or during the silicothermic reduction of Y<sub>2</sub>O<sub>3</sub> (2) would reduce the amount of Si [<xref ref-type="bibr" rid="scirp.115456-ref8">8</xref>].</p><p>Si + SiO<sub>2</sub> → 2SiO (1)</p><p>Si + Y<sub>2</sub>O<sub>3</sub> → 2Y + 3SiO (2)</p><p>These reactions would result in the formation of Y<sub>3</sub>Si<sub>5</sub> instead of YSi<sub>2</sub> from the stoichiometric mixture of Y:Si = 1:2. Actually, the low temperature phase of Y<sub>3</sub>Si<sub>5</sub> is the α-Y<sub>3</sub>Si<sub>5</sub> with the orthorhombic crystal structure (space group: I4<sub>1</sub>/amd, distorted form of the tetragonal ThSi<sub>2</sub> type), which is identical to that of the low temperatures form of β-YSi<sub>2</sub> reported in the early works [<xref ref-type="bibr" rid="scirp.115456-ref8">8</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref9">9</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref10">10</xref>]. This speculation would be further supported by the fact that the phase transformation from α- to β-Y<sub>3</sub>Si<sub>5</sub> occurred at about 450˚C, which was close to that of β- to α-YSi<sub>2</sub> reported in the earlier works [<xref ref-type="bibr" rid="scirp.115456-ref8">8</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref9">9</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref10">10</xref>]. It was reported that euiatomic phase YSi appeared to be little affected by oxygen, however, the presence of oxygen in high temperature preparations involving Y<sub>3</sub>Si<sub>5</sub> could stabilize the hexagonal structure towards greater silicon deficiency and a Y:Si composition of Y<sub>2</sub>Si<sub>3</sub> whilst low temperature material of “Y<sub>2</sub>Si<sub>3</sub>O<sub>x</sub>” composition had an unstable orthorhombic structure [<xref ref-type="bibr" rid="scirp.115456-ref4">4</xref>]. Thus, the presence of oxygen during preparing the Y-Si compounds could significantly influence the phase identification results of this system.</p><p>It is well known that transition metal silicides possess good potential for use as structural materials at high temperature. However, high temperature oxidation behaviors about active metal silicides such as Yttrium Silicides have been rarely known. It was reported that undoped Y<sub>5</sub>Si<sub>3</sub> showed poor oxidation resistance above 700˚C due to mechanical failure under stresses produced by growth of the oxidation product [<xref ref-type="bibr" rid="scirp.115456-ref11">11</xref>]. Because YSi<sub>2</sub> nanoparticles incorporated SiGe exhibited excellent thermoelectric (TE) properties, the bulk YSi<sub>2</sub> was fabricated and the TE properties were investigated recently [<xref ref-type="bibr" rid="scirp.115456-ref12">12</xref>]. However, no physical and/or chemical properties have been reported for YSi<sub>2</sub> powder. The purpose of this work is to investigate the physical and chemical properties of YSi<sub>2</sub> powders fabricated by various methods paying special attention to their oxygen impurities.</p></sec><sec id="s2"><title>2. Experimental</title><sec id="s2_1"><title>2.1. Synthesis of Low Purity YSi<sub>2</sub> Powders</title><p>Yttrium metal powder (purity &gt; 99.9%, under 20 mesh; RARE METALLIC Co., Ltd.) supplied as paraffin slurry was separated by vacuum filtration and washed several times with hexane. Silicon powder (purity &gt; 98.0%, under 100 mesh; Oxygen content = 1.03 wt%; Fuji film Wako Pure Chemical Corp.) was pulverized by using a rotary ball mill at 118 rpm for 8 hrs using 5 mmf Si<sub>3</sub>N<sub>4</sub> grinding media to give the Si powder having mean particle size of 8.3 μm and oxygen content = 1.17 wt%. These powders were mixed with a composition of Y:Si = 1:2 in molar ratios, and uniaxially pressed at 30 MPa in a 15 mm diameter stainless-steel die. The powder compact was placed in a quartz tube (inner diameter = 10 mm and length = 10 cm), which was evacuated using a rotary pump, and then was sealed using a H<sub>2</sub>-O<sub>2</sub> gas burner. The quartz tube was heat treated at 1100˚C for 5 hr using a muffle furnace (Model MPC10; ADVANTEC Co., Ltd.) using the heating rate of 10˚C/min.</p><p>The same powder compact was placed in a high purity BN crucible (N-1 grade; DENKA Company Ltd.), which was heat treated in a graphite susceptor at 1090˚C for 5 hrs or 1500˚C for 1 hr using a vacuum furnace with a graphite heating element (Model FVPHP-R-3: FUJIDENPA KOGYO Co., Ltd.). Heating and cooling rates were both 10˚C/min.</p></sec><sec id="s2_2"><title>2.2. Synthesis of High Purity YSi<sub>2</sub> Powders</title><p>A Yttrium metal ingot (purity &gt; 99.9%, 7 - 10 mm; RARE METALLIC Co., Ltd.) was surrounded by Si powder (Purity &gt; 99.99%, Oxygen content = 0.081 wt%, 300 μm pass; KOJUNDO CHEMICAL LABORATORY Co., Ltd.) using the molar ratio of Y:Si = 1:2 in a high purity BN crucible (N-1 grade; DENKA Company Ltd.), which was heat treated in a graphite susceptor at 1600˚C for 30 min under Ar atmosphere of 0.1 MPa using a furnace with a graphite heating element. Heating and cooling rates were both 10˚C/min.</p></sec><sec id="s2_3"><title>2.3. Chemical Stability Tests of YSi<sub>2</sub> Powders</title><p>A small amount of pulverized YSi<sub>2</sub> powder was immersed to various solvents including purified water, methanol (&gt;99.8%), ethanol (&gt;99.5%), propanol (&gt;99.7%), butanol (&gt;99.5%), benzene (&gt;99.5%), n-hexane (&gt;96.0%), or acetonitrile (&gt;99.5%) in a test tube, and was settled for 24 hrs at room temperature under the atmospheric condition observing every hour whether the formation of bubbles or white precipitates occurred or not.</p><p>Low purity YSi<sub>2</sub> powder synthesized at 1500˚C for 1 hr and high purity YSi<sub>2</sub> powder synthesized at 1600˚C for 30 min were ground for 12 hrs by using a rotary ball mill at 120 rpm in various solvents including 2-propanol, n-hexane, or acetonitrile using 5 mmf Si<sub>3</sub>N<sub>4</sub> grinding media at room temperature under the atmospheric condition. After milling, each solvent was removed using a rotary evaporator, dried in an oven at 120˚C for 6 hrs, and sieved by passing through a 60 mesh nylon sieve. The oxygen content of each powder was determined by the hot-gas extraction method (EMGA-920, HORIBA Ltd.) using 20 mg powder sample encapsulated with 1.0 g pure iron in a Ni crucible.</p></sec></sec><sec id="s3"><title>3. Results and Discussion</title><sec id="s3_1"><title>3.1. Fabrication Conditions and XRD Identification Results of Y-Si Compounds</title><p><xref ref-type="table" rid="table1">Table 1</xref> summarizes the fabrication conditions of Y-Si compounds with Y:Si = 1:2 composition indicating five powder samples as No. 1-5. <xref ref-type="fig" rid="fig2">Figure 2</xref> shows the XRD patterns of powder samples No. 1-4. Since the XRD pattern of sample No. 5 was found to be identical to that of No. 4, <xref ref-type="fig" rid="fig2">Figure 2</xref> lacks its XRD pattern. <xref ref-type="table" rid="table2">Table 2</xref> summarizes the XRD identification results of Y-Si compounds prepared in this work. <xref ref-type="table" rid="table3">Table 3</xref> and <xref ref-type="table" rid="table4">Table 4</xref> compare powder XRD peak data obtained in this work having 1) hexagonal and 2) orthorhombic, respectively, crystal structures with those of Powder Diffraction File (PDF) database registered by the International Centre for Diffraction Data (ICDD). As shown in <xref ref-type="table" rid="table2">Table 2</xref>, Y-Si compounds with hexagonal structure were identified as α-YSi<sub>2</sub> or β-Y<sub>3</sub>Si<sub>5</sub>, because both phases are indistinguishable with their XRD patterns as shown in <xref ref-type="table" rid="table3">Table 3</xref>.</p><p>It was reported that α-YSi<sub>2</sub> and β-Y<sub>3</sub>Si<sub>5</sub> had the identical crystal structure, P6/mmm, and β-Y<sub>3</sub>Si<sub>5</sub> had defect structure: Si atoms occupy 83% of the 2(d) positions in the space group P6/mmm [<xref ref-type="bibr" rid="scirp.115456-ref13">13</xref>]. Also, the orthorhombic phase was identified as β-YSi<sub>2</sub>, because it was reported that the low temperature phase α-Y<sub>3</sub>Si<sub>5</sub> (Ortho.) was stable below 450˚C [<xref ref-type="bibr" rid="scirp.115456-ref9">9</xref>]. Apparently, only sample No.2 has the orthorhombic structure, and the other samples possess the hexagonal structure as shown in <xref ref-type="table" rid="table3">Table 3</xref> and <xref ref-type="table" rid="table4">Table 4</xref>. Samples No. 1 and 2 were fabricated with low purity metal powders at virtually the same temperature around 1100˚C, at which the low temperature phase, α-YSi<sub>2</sub>, should be stable according to the latest phase diagram [<xref ref-type="bibr" rid="scirp.115456-ref1">1</xref>]. However, sample No. 2 fabricated at 1090˚C in a graphite furnace under vacuum condition (continuously evacuated using a rotary pomp) possesses the orthorhombic structure, the high temperature phase stable above 1250˚C. It would be noteworthy that sample No. 3 that was fabricated at 1500˚C in the same conditions other than temperature as sample No. 2 possesses the hexagonal structure, the low temperature phase stable below 1250˚C. This apparent contradiction would be explained as follows; Samples No. 1-3 were fabricated using Yttrium powder, which should contain a significant amount of surface oxygen, although the oxygen content was not accounted for its purity, 99.9% that accounted only for the total metal impurity. Because sample No.1 was fabricated in a sealed quartz tube (closed system), the vaporization of SiO according to Equation (1) would be suppressed. This speculation would be supported by the fact that weak peaks of Y<sub>2</sub>O<sub>3</sub> are observed only in the sample No.1, which also shows middle intensities of Si peaks suggesting that Equation (1) be suppressed. However, when heat-treated under vacuum (open system), the amount of Si and Y<sub>2</sub>O<sub>3</sub> would be reduced according to Equations (1) and (2), respectively, resulting the formation of unstable phase with orthorhombic structure [<xref ref-type="bibr" rid="scirp.115456-ref4">4</xref>] as observed for sample No. 2. When heat-treated at higher temperature, 1500˚C, this unstable Y<sub>2</sub>Si<sub>3</sub>O<sub>x</sub> phase would decompose to the stable phases, β-Y<sub>3</sub>Si<sub>5</sub> and Y<sub>2</sub>SiO<sub>5</sub> and/or Y<sub>2</sub>Si<sub>2</sub>O<sub>7</sub> as shown in <xref ref-type="table" rid="table2">Table 2</xref>.</p><table-wrap id="table1" ><label><xref ref-type="table" rid="table1">Table 1</xref></label><caption><title> Fabrication conditions of Y-Si compounds</title></caption><table><tbody><thead><tr><th align="center" valign="middle"  rowspan="3"  >No.</th><th align="center" valign="middle"  colspan="2"  >Raw materials</th><th align="center" valign="middle"  colspan="3"  >Heat treatment conditions</th></tr></thead><tr><td align="center" valign="middle" >Yttrium</td><td align="center" valign="middle" >Silicon</td><td align="center" valign="middle" >Temp.</td><td align="center" valign="middle" >Duration</td><td align="center" valign="middle"  rowspan="2"  >Atmosphere</td></tr><tr><td align="center" valign="middle" >(purity)</td><td align="center" valign="middle" >[O]</td><td align="center" valign="middle" >(˚C)</td><td align="center" valign="middle" >hr</td></tr><tr><td align="center" valign="middle" >1</td><td align="center" valign="middle" >powder (99.9%)</td><td align="center" valign="middle" >8.3 mm (1.17%)</td><td align="center" valign="middle" >1100</td><td align="center" valign="middle" >5</td><td align="center" valign="middle" >Quartz tube</td></tr><tr><td align="center" valign="middle" >2</td><td align="center" valign="middle" >powder (99.9%)</td><td align="center" valign="middle" >8.3 mm (1.17%)</td><td align="center" valign="middle" >1090</td><td align="center" valign="middle" >5</td><td align="center" valign="middle" >Vacuum</td></tr><tr><td align="center" valign="middle" >3</td><td align="center" valign="middle" >powder (99.9%)</td><td align="center" valign="middle" >8.3 mm (1.17%)</td><td align="center" valign="middle" >1500</td><td align="center" valign="middle" >1</td><td align="center" valign="middle" >Vacuum</td></tr><tr><td align="center" valign="middle" >4</td><td align="center" valign="middle" >ingot (99.9%)</td><td align="center" valign="middle" >−100 Me’ (0.081%)</td><td align="center" valign="middle" >1600</td><td align="center" valign="middle" >0.5</td><td align="center" valign="middle" >0.1 MPa Ar</td></tr><tr><td align="center" valign="middle" >5</td><td align="center" valign="middle" >ingot (99.9%)</td><td align="center" valign="middle" >−100 Me’ (0.081%)</td><td align="center" valign="middle" >1600 1100</td><td align="center" valign="middle" >0.5 12</td><td align="center" valign="middle" >0.1 MPa Ar</td></tr></tbody></table></table-wrap><table-wrap id="table2" ><label><xref ref-type="table" rid="table2">Table 2</xref></label><caption><title> XRD identification results of Y-Si compounds prepared in this work</title></caption><table><tbody><thead><tr><th align="center" valign="middle"  rowspan="2"  >No.</th><th align="center" valign="middle"  colspan="5"  >XRD identification results</th></tr></thead><tr><td align="center" valign="middle" >α-YSi<sub>2</sub> (Hex.)<sup>*1</sup> or β-Y<sub>3</sub>Si<sub>5</sub> (Hex.)<sup>*2</sup></td><td align="center" valign="middle" >β-YSi<sub>2</sub> (Ortho.)<sup>*1</sup></td><td align="center" valign="middle" >Si</td><td align="center" valign="middle" >Y<sub>2</sub>SiO<sub>5</sub> and/or Y<sub>2</sub>Si<sub>2</sub>O<sub>7</sub></td><td align="center" valign="middle" >Y<sub>2</sub>O<sub>3</sub></td></tr><tr><td align="center" valign="middle" >1</td><td align="center" valign="middle" >vs</td><td align="center" valign="middle" >―</td><td align="center" valign="middle" >m</td><td align="center" valign="middle" >tr</td><td align="center" valign="middle" >w</td></tr><tr><td align="center" valign="middle" >2</td><td align="center" valign="middle" >―</td><td align="center" valign="middle" >vs</td><td align="center" valign="middle" >w</td><td align="center" valign="middle" >tr</td><td align="center" valign="middle" >―</td></tr><tr><td align="center" valign="middle" >3</td><td align="center" valign="middle" >vs</td><td align="center" valign="middle" >―</td><td align="center" valign="middle" >w</td><td align="center" valign="middle" >w</td><td align="center" valign="middle" >―</td></tr><tr><td align="center" valign="middle" >4</td><td align="center" valign="middle" >vs</td><td align="center" valign="middle" >―</td><td align="center" valign="middle" >m</td><td align="center" valign="middle" >―</td><td align="center" valign="middle" >―</td></tr><tr><td align="center" valign="middle" >5</td><td align="center" valign="middle" >vs</td><td align="center" valign="middle" >―</td><td align="center" valign="middle" >m</td><td align="center" valign="middle" >―</td><td align="center" valign="middle" >―</td></tr></tbody></table></table-wrap><p>Intensity: vs: very strong; w: weak; vw: very weak; tr: trace; ―: not detected. *1: It was reported that α-YSi<sub>2</sub> (No. 11-0596 in the PDF-ICDD) and β-YSi<sub>2</sub> (No. 11-0324 in the PDF-ICDD) were the low and high temperature phases, respectively, and the phase transformation occurred at 1250˚C [<xref ref-type="bibr" rid="scirp.115456-ref3">3</xref>]. *2: Since it was reported that the low temperature phase α-Y<sub>3</sub>Si<sub>5</sub> (Ortho.) was stable below 450˚C [<xref ref-type="bibr" rid="scirp.115456-ref9">9</xref>], the high temperature phase β-Y<sub>3</sub>Si<sub>5</sub> (No. 72-2173 in the PDF-ICDD) would be the stable phase in the current experimental condition. It was also reported that α-YSi<sub>2</sub> and β-Y<sub>3</sub>Si<sub>5</sub> had the identical crystal structure, P6/mmm, and β-Y<sub>3</sub>Si<sub>5</sub> had defect structure: Si atoms occupy 83% of the 2(d) positions in the space group P6/mmm [<xref ref-type="bibr" rid="scirp.115456-ref13">13</xref>].</p><table-wrap id="table3" ><label><xref ref-type="table" rid="table3">Table 3</xref></label><caption><title> Comparison of powder XRD peak data obtained in this work with Powder Diffraction File (PDF) database registered by ICDD* (1) Hexagonal crystal structure</title></caption><table><tbody><thead><tr><th align="center" valign="middle"  colspan="4"  >PDF database</th><th align="center" valign="middle"  colspan="3"   rowspan="2"  >Sample No. and their powder XRD peak data obtained in this work</th></tr></thead><tr><td align="center" valign="middle" >Card No.</td><td align="center" valign="middle" >Compound</td><td align="center" valign="middle" >Card No.</td><td align="center" valign="middle" >Compound</td></tr><tr><td align="center" valign="middle" >11-0596</td><td align="center" valign="middle" >YSi<sub>2</sub></td><td align="center" valign="middle" >72-2173</td><td align="center" valign="middle" >Y<sub>3</sub>Si<sub>5</sub></td><td align="center" valign="middle" >No. 1</td><td align="center" valign="middle" >No. 3</td><td align="center" valign="middle" >No. 4</td></tr><tr><td align="center" valign="middle" >hkl</td><td align="center" valign="middle" >2θ</td><td align="center" valign="middle" >hkl</td><td align="center" valign="middle" >2θ</td><td align="center" valign="middle" >2θ</td><td align="center" valign="middle" >2θ</td><td align="center" valign="middle" >2θ</td></tr><tr><td align="center" valign="middle" >001</td><td align="center" valign="middle" >21.446</td><td align="center" valign="middle" >001</td><td align="center" valign="middle" >21.446</td><td align="center" valign="middle" >21.42</td><td align="center" valign="middle" >21.42</td><td align="center" valign="middle" >21.40</td></tr><tr><td align="center" valign="middle" >100</td><td align="center" valign="middle" >26.831</td><td align="center" valign="middle" >100</td><td align="center" valign="middle" >26.772</td><td align="center" valign="middle" >26.76</td><td align="center" valign="middle" >26.82</td><td align="center" valign="middle" >26.84</td></tr><tr><td align="center" valign="middle" >101</td><td align="center" valign="middle" >34.604</td><td align="center" valign="middle" >101</td><td align="center" valign="middle" >34.557</td><td align="center" valign="middle" >34.54</td><td align="center" valign="middle" >34.58</td><td align="center" valign="middle" >34.62</td></tr><tr><td align="center" valign="middle" >002</td><td align="center" valign="middle" >43.692</td><td align="center" valign="middle" >002</td><td align="center" valign="middle" >43.694</td><td align="center" valign="middle" >43.64</td><td align="center" valign="middle" >43.64</td><td align="center" valign="middle" >43.64</td></tr><tr><td align="center" valign="middle" >110</td><td align="center" valign="middle" >47.331</td><td align="center" valign="middle" >110</td><td align="center" valign="middle" >47.280</td><td align="center" valign="middle" >47.26</td><td align="center" valign="middle" >47.40</td><td align="center" valign="middle" >47.42</td></tr><tr><td align="center" valign="middle" >102</td><td align="center" valign="middle" >52.068</td><td align="center" valign="middle" >102</td><td align="center" valign="middle" >51.986</td><td align="center" valign="middle" >51.96</td><td align="center" valign="middle" >51.98</td><td align="center" valign="middle" >52.00</td></tr><tr><td align="center" valign="middle" >111</td><td align="center" valign="middle" >52.551</td><td align="center" valign="middle" >111</td><td align="center" valign="middle" >52.470</td><td align="center" valign="middle" >52.42</td><td align="center" valign="middle" >52.56</td><td align="center" valign="middle" >52.58</td></tr><tr><td align="center" valign="middle" >200</td><td align="center" valign="middle" >55.258</td><td align="center" valign="middle" >200</td><td align="center" valign="middle" >55.165</td><td align="center" valign="middle" >55.22</td><td align="center" valign="middle" >55.30</td><td align="center" valign="middle" >55.34</td></tr><tr><td align="center" valign="middle" >201</td><td align="center" valign="middle" >59.938</td><td align="center" valign="middle" >201</td><td align="center" valign="middle" >59.869</td><td align="center" valign="middle" >59.90</td><td align="center" valign="middle" >59.98</td><td align="center" valign="middle" >60&lt;</td></tr></tbody></table></table-wrap><table-wrap id="table4" ><label><xref ref-type="table" rid="table4">Table 4</xref></label><caption><title> Comparison of powder XRD peak data obtained in this work with Powder Diffraction File (PDF) database registered by ICDD* (2) Orthorhombic crystal structure</title></caption><table><tbody><thead><tr><th align="center" valign="middle"  colspan="2"  >PDF database</th><th align="center" valign="middle"  rowspan="3"  >Powder XRD peak data of sample No. 2</th></tr></thead><tr><td align="center" valign="middle" >Card No.</td><td align="center" valign="middle" >Compound</td></tr><tr><td align="center" valign="middle" >11-0324</td><td align="center" valign="middle" >YSi<sub>2</sub></td></tr><tr><td align="center" valign="middle" >hkl</td><td align="center" valign="middle" >2θ</td><td align="center" valign="middle" >2θ</td></tr><tr><td align="center" valign="middle" >101</td><td align="center" valign="middle" >22.961</td><td align="center" valign="middle" >22.92</td></tr><tr><td align="center" valign="middle" >011</td><td align="center" valign="middle" >23.452</td><td align="center" valign="middle" >23.46</td></tr><tr><td align="center" valign="middle" >004</td><td align="center" valign="middle" >26.748</td><td align="center" valign="middle" >26.70</td></tr><tr><td align="center" valign="middle" >103</td><td align="center" valign="middle" >29.856</td><td align="center" valign="middle" >29.80</td></tr><tr><td align="center" valign="middle" >013</td><td align="center" valign="middle" >30.271</td><td align="center" valign="middle" >30.22</td></tr><tr><td align="center" valign="middle" >112</td><td align="center" valign="middle" >34.465</td><td align="center" valign="middle" >34.40</td></tr><tr><td align="center" valign="middle" >105</td><td align="center" valign="middle" >40.413</td><td align="center" valign="middle" >40.44</td></tr><tr><td align="center" valign="middle" >015</td><td align="center" valign="middle" >40.795</td><td align="center" valign="middle" >40.74</td></tr><tr><td align="center" valign="middle" >200</td><td align="center" valign="middle" >44.69</td><td align="center" valign="middle" >44.64</td></tr><tr><td align="center" valign="middle" >020</td><td align="center" valign="middle" >45.86</td><td align="center" valign="middle" >45.90</td></tr><tr><td align="center" valign="middle" >116</td><td align="center" valign="middle" >52.194</td><td align="center" valign="middle" >52.24</td></tr><tr><td align="center" valign="middle" >204</td><td align="center" valign="middle" >52.942</td><td align="center" valign="middle" >53.00</td></tr><tr><td align="center" valign="middle" >107</td><td align="center" valign="middle" >53.208</td><td align="center" valign="middle" >53.28</td></tr><tr><td align="center" valign="middle" >017</td><td align="center" valign="middle" >53.409</td><td align="center" valign="middle" >53.44</td></tr><tr><td align="center" valign="middle" >024</td><td align="center" valign="middle" >53.781</td><td align="center" valign="middle" >53.90</td></tr><tr><td align="center" valign="middle" >213</td><td align="center" valign="middle" >54.933</td><td align="center" valign="middle" >54.96</td></tr></tbody></table></table-wrap><p>When high purity metal powders were used, only diffraction peaks attributed to the hexagonal phase and Si are observed for sample No. 4 and almost no other oxide phases exist. A fact that the stoichiometric mixture of Y:Si = 1:2 resulted in the formation of Si suggests that the hexagonal phase would not be α-YSi<sub>2</sub> but β-Y<sub>3</sub>Si<sub>5</sub>, which would be further supported by the fact that the sample No. 4 was heat-treated at as high as 1600˚C, at which this mixture should form a homogeneous liquid phase according to the Y-Si phase diagram [<xref ref-type="bibr" rid="scirp.115456-ref1">1</xref>]. To confirm whether the mixture of β-Y<sub>3</sub>Si<sub>5</sub> and Si would be the stable phases for the stoichiometric mixture of Y:Si = 1:2, sample No.4 was further heat-treated at 1100˚C for 12 hrs, which was specified as sample No. 5 in <xref ref-type="table" rid="table1">Table 1</xref>. This equilibration process did not change the diffraction peaks observed for sample No. 4 at all, supporting the hypothesis above mentioned. A recent study regarding the fabrication of YSi<sub>2</sub> by the spark plasma sintering at 1273 K under Ar atmosphere using high purity metals also demonstrated that the main peaks of all samples agreed well with the YSi<sub>1.67</sub> standard pattern (JCPDS 01-071-3919), representing the single phase of the AlB<sub>2</sub>-type structure (P6/mmm) [<xref ref-type="bibr" rid="scirp.115456-ref12">12</xref>]. It would be interesting that the 2θ values of all diffraction peaks of the β-Y<sub>3</sub>Si<sub>5</sub> hexagonal lattice shifted in the order of sample No. 1 &gt; No. 3 &gt; No. 4 as shown in <xref ref-type="table" rid="table3">Table 3</xref>, suggesting that their lattice constants would be enlarged with the amount of oxygen impurity.</p><p>As described in the introduction, although the latest Y-Si phase diagram shown in <xref ref-type="fig" rid="fig1">Figure 1</xref> [<xref ref-type="bibr" rid="scirp.115456-ref1">1</xref>] demonstrated that the α- and β-YSi<sub>2</sub> phases were the stable phases for the stoichiometric composition of Y:Si = 1:2 adopting the experimental results clearly showing their existences [<xref ref-type="bibr" rid="scirp.115456-ref6">6</xref>] [<xref ref-type="bibr" rid="scirp.115456-ref7">7</xref>]. However, a detailed investigation of phase equilibria and crystal structures of the compounds taking the effects of impurity oxygen into account demonstrated that the formation of YSi<sub>2</sub> was not confirmed as a stable phase [<xref ref-type="bibr" rid="scirp.115456-ref4">4</xref>]. As a result, there have been several phase diagrams for the Y-Si system. The current experimental results suggest that the high temperature phase with the hexagonal structure, β-Y<sub>3</sub>Si<sub>5</sub>, would be the stable phase even for the stoichiometric composition of Y:Si = 1:2, and that the high temperature phase with the orthorhombic structure, β-YSi<sub>2</sub>, would be the meta-stable phase under high oxygen impurity content. Further investigation would be necessary to clarify the phase diagram of Y-Si system.</p></sec><sec id="s3_2"><title>3.2. Chemical Stabilities of Y-Si Compounds</title><p><xref ref-type="fig" rid="fig3">Figure 3</xref> and <xref ref-type="fig" rid="fig4">Figure 4</xref> show the appearances of α type and β type YSi<sub>2</sub> powders (sample No. 2 and 3), respectively, immersed in purified water, methanol, ethanol, propanol, butanol, benzene, n-hexane, or acetonitrile (from the left end to the right end) settled for 0, 1, 2, 4, 8, 16 and 24 hrs at room temperature under the atmospheric condition. It was observed that the dispersibility increased in the order as follows, water &lt; methanol &lt; ethanol &lt; 2-propanol &gt; butanol ~ acetonitrile &gt;&gt; benzene ~ n-hexane, demonstrating that the best solvent is propanol for dispersing YSi<sub>2</sub> powders. There was almost no difference between α type and β type YSi<sub>2</sub> powders, but β type showed better dispersibility after long duration, which would be due to the difference of mean particle sizes of both powders, 17 μm and 10 μm, respectively. It should be noted that neither the formation of bubbles nor white precipitates was observed in all solvents even after 24 hrs for both powders, suggesting much superior chemical stability to solvents of YSi<sub>2</sub> powders than Yttrium metal and Alkaline Earth Silicides, for which the formation of bubbles and/or white precipitates were observed in all solvents immediately after dispersing these powders.</p><table-wrap id="table5" ><label><xref ref-type="table" rid="table5">Table 5</xref></label><caption><title> Oxygen contents of YSi<sub>2</sub> powders with low and high purity before and after grinding</title></caption><table><tbody><thead><tr><th align="center" valign="middle"  rowspan="3"  >Powder sample</th><th align="center" valign="middle"  colspan="4"  >Oxygen content (wt%)</th></tr></thead><tr><td align="center" valign="middle" >Before grinding</td><td align="center" valign="middle"  colspan="3"  >After grinding in</td></tr><tr><td align="center" valign="middle" >&lt;150 μm</td><td align="center" valign="middle" >2-propanol</td><td align="center" valign="middle" >n-hexane</td><td align="center" valign="middle" >acetonitrile</td></tr><tr><td align="center" valign="middle" >No. 3 (low purity)</td><td align="center" valign="middle" >1.40</td><td align="center" valign="middle" >2.51</td><td align="center" valign="middle" >2.53</td><td align="center" valign="middle" >2.6</td></tr><tr><td align="center" valign="middle" >No. 4 (high purity)</td><td align="center" valign="middle" >0.59</td><td align="center" valign="middle" >1.70</td><td align="center" valign="middle" >1.39</td><td align="center" valign="middle" >1.77</td></tr></tbody></table></table-wrap><p><xref ref-type="table" rid="table5">Table 5</xref> summarizes the oxygen contents of YSi<sub>2</sub> powders with low and high purity, sample No. 3 and 4 respectively, before and after grinding in 2-propanol, n-hexane or acetonitrile at room temperature under the atmospheric condition. It was confirmed that the use of high purity metals resulted in reducing oxygen content by about 58% comparing to the low purity metal powders. After grinding these powders in a ball mill at 120 rpm for 12 hrs using 2-propanol, n-hexane, or acetonitrile as solvents, the oxygen contents increased significantly probably due to the mechano-chemical effect. Although those solvents without hydroxy group, n-hexane and acetonitrile, were expected not to increase the oxygen content, there was almost no difference for oxygen contents after milling in all solvents for powder sample No. 3 (low purity). However, for powder sample No. 4 (high purity), n-hexane gave the least oxygen content probably due to its less contents of oxides such as Y<sub>2</sub>SiO<sub>5</sub> and/or Y<sub>2</sub>Si<sub>2</sub>O<sub>7</sub> as shown in <xref ref-type="table" rid="table2">Table 2</xref>.</p></sec></sec><sec id="s4"><title>4. Conclusion</title><p>Y-Si compounds with the composition of Y:Si = 1:2 were fabricated using Yttrium and Silicon raw powders with low and high purity in various atmospheres and temperatures. Although the latest Y-Si phase diagram demonstrated that the α- and β-YSi<sub>2</sub> phases were the stable phases for the stoichiometric composition of Y:Si = 1:2, the current experimental results suggest that the high temperature phase with the hexagonal structure, β-Y<sub>3</sub>Si<sub>5</sub>, would be the stable phase even for the stoichiometric composition of Y:Si = 1:2, and that the high temperature phase with the orthorhombic structure, β-YSi<sub>2</sub>, would be the meta-stable phase under high oxygen impurity content. It was demonstrated that YSi<sub>2</sub> powders possess much superior chemical stability than Yttrium metal. It was found that the best dispersing solvent for YSi<sub>2</sub> powder was 2-propanol.</p></sec><sec id="s5"><title>Conflicts of Interest</title><p>The authors declare no conflicts of interest regarding the publication of this paper.</p></sec><sec id="s6"><title>Cite this paper</title><p>Matsushima, R. and Kitayama, M. (2022) Crystal Phases and Chemical Stabilities of YSi<sub>2</sub> Powders Fabricated from Low and High Purity Si and Y Powders. Journal of Materials Science and Chemical Engineering, 10, 18-28. https://doi.org/10.4236/msce.2022.102002</p></sec></body><back><ref-list><title>References</title><ref id="scirp.115456-ref1"><label>1</label><mixed-citation publication-type="other" xlink:type="simple">Okamoto, H. (2011) Si-Y (Silicon-Yttrium). 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