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S. A. Smirnov, V. N. Panteleev, Y. V. Zhilyaev, et al., “Study of GaN Crystal Layer Growing in the Horizontal Reactor by Chloride Epitaxy Method,” Journal of Technical Physics, Vol. 78, No. 12, 2008, pp. 70-73.

has been cited by the following article:

• TITLE: Study of Gallium Plating of Metal Electrodes

  AUTHORS: S. V. Gladyshev, R. A. Abdulvaliev, K. O. Beisembekova, G. Sarsenbay

  KEYWORDS: Gallium Plating; Metal Electrodes; Hydrochloric Acid; Gallium Covering; Stainless Steel 08х18н12т; Steel 1; Steel 2; Steel 3; Steel 45; Nickel; Cadmium; Copper

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.1 No.5, November 7, 2013

  ABSTRACT: Conditions of gallium plating of metal electrodes were studied in the paper. It was found that stability of gallium cover depends on the material and is increasing in the raw: stainless steel 08Х18Н12Т 36Ni64(Ga Ni2) compound and gallium with copper form CuGa2compound. Different acids were used for electrode leaching: H2SO4; HNO3; H3PO4; HCI. It was shown that only hydrochloric acid is suit-able for gallium plating of the electrodes.