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M. Elstner, D. Porezag, G. Jungnickel, J. Elsner, M. Haugk, Th. Frauenheim, S. Suhai and G. Seifert, “Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties,” Physical Review B, Vol. 58, 1998, pp. 7260-7268. doi:10.1103/PhysRevB.58.7260

has been cited by the following article:

• TITLE: Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.

  AUTHORS: I. Belabbas, J. Chen, Ph. Komninou, G. Nouet

  KEYWORDS: Gallium Nitride; 60°Basal Dislocation; Core Structure; Energy; Tight-binding; SCC-DFTB

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.3 No.4B, October 28, 2013

  ABSTRACT: We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.