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M. Albrecht, H. P. Strunk, J. L. Weyher, I. Grzegory, S. Porowski and T. Wosinski, “Carrier Recomnination at Single Dislocation in GaN Measured by Cathodoluminescence in a Transmission Electron Microscope,” Journal of Applied Physics, Vol. 92, 2002, pp. 2000-2005. doi:10.1063/1.1490618

has been cited by the following article:

• TITLE: Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.

  AUTHORS: I. Belabbas, J. Chen, Ph. Komninou, G. Nouet

  KEYWORDS: Gallium Nitride; 60°Basal Dislocation; Core Structure; Energy; Tight-binding; SCC-DFTB

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.3 No.4B, October 28, 2013

  ABSTRACT: We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.