Article citationsMore>>

A. T. Blumenau, J. Elsner, R. Jones, M. I. Heggie, S. Oberg, Th. Frauenheim and PR. Briddon, “Dislocations in Hexagonal and Cubic GaN,” Journal of Physics: Condensed Matter, Vol. 12, 2000, pp. 10223-10233. doi:10.1088/0953-8984/12/49/322

has been cited by the following article:

• TITLE: Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.

  AUTHORS: I. Belabbas, J. Chen, Ph. Komninou, G. Nouet

  KEYWORDS: Gallium Nitride; 60°Basal Dislocation; Core Structure; Energy; Tight-binding; SCC-DFTB

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.3 No.4B, October 28, 2013

  ABSTRACT: We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.