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I. Belabbas, M. A. Belkhir, Y. H. Lee, A. Béré, P. Ruterana, J. Chen and G. Nouet, “Local Electronic Structure of Threading Screw Dislocation in GaN Wurtzite,” Computational Materials Science, Vol. 37, 2006, pp. 410-416. doi:10.1016/j.commatsci.2005.11.002

has been cited by the following article:

• TITLE: Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.

  AUTHORS: I. Belabbas, J. Chen, Ph. Komninou, G. Nouet

  KEYWORDS: Gallium Nitride; 60°Basal Dislocation; Core Structure; Energy; Tight-binding; SCC-DFTB

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.3 No.4B, October 28, 2013

  ABSTRACT: We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.