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B. A. Haskel, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck and S. Nakamura, “Structural and Morphological Characteristics of Planar A-plane Gallium Nitride Grown by Hydride Vapor Phase Epitaxy,” Applied Physics Letters, Vol. 83, 2003, pp. 1554-1556. doi:10.1063/1.1604174

has been cited by the following article:

• TITLE: Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.

  AUTHORS: I. Belabbas, J. Chen, Ph. Komninou, G. Nouet

  KEYWORDS: Gallium Nitride; 60°Basal Dislocation; Core Structure; Energy; Tight-binding; SCC-DFTB

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.3 No.4B, October 28, 2013

  ABSTRACT: We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.