Article citationsMore>>

S. Strite, M. E. Lin and H. Morkoç, “Progress and Prospects for GaN and the III-V Nitride Semiconducteors,” Thin Solid Films, Vol. 231, 1992, pp.197-210. doi:10.1016/0040-6090(93)90713-Y

has been cited by the following article:

• TITLE: Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.

  AUTHORS: I. Belabbas, J. Chen, Ph. Komninou, G. Nouet

  KEYWORDS: Gallium Nitride; 60°Basal Dislocation; Core Structure; Energy; Tight-binding; SCC-DFTB

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.3 No.4B, October 28, 2013

  ABSTRACT: We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in GaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.