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G. Orsal, N. Romain, M. C. Artaud and S. Duchemin, “Characterization of CuGaSe2 Thin Films Grown by MOCV,” IEEE Transaction on Electron Device, Vol. 46, No. 10, 1999, pp. 2098-2102.
http://dx.doi.org/10.1109/16.792003

has been cited by the following article:

• TITLE: Influence of Iodine Pressure on the Growth of CuIn1-xGaxSe2 Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”

  AUTHORS: Dayane Habib, Roy Al Asmar, Ziad El Helou, Georges El Haj Moussa

  KEYWORDS: Chemical Vapor Deposition; CuIn1-xGaxSe2; Thin Films; Chalcopyrite; Photovoltaic

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.3 No.4, October 14, 2013

  ABSTRACT: We present the results concerning photovoltaic materials CuIn1-xGaxSe2 thin films, which were obtained by close-spaced vapor transport “CSVT”. The influence of the iodine pressure on the growth of CuIn1-xGaxSe2 thin films was studied. The thin films were characterized by Energy Dispersive Spectrometry (EDS), Scanning Electron Microscope (SEM), hot point probe method, X-Ray Diffraction (XRD), Photoluminescence, and Optical response (Photoconductivity). At high pressure, the deposition rate was very important. The films were relatively thick and homogeneous with large grains dimensions. These films are formed of crystals placed in a preferential orientation depending on the plan (112). At low pressure, the films were thin and inhomogeneous with relatively small grains. These films of crystals didn’t have preferential orientation.