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M. A. L. Johnson, S. Fujita, W. H. Rowland, Jr., W. C. Hughes, J. W. Cook, Jr. and J. F. Schetzina, “MBE Growth and Properties of ZnO on Sapphire and SiC Substrates,” Journal of Electronic Materials, Vol. 25, No. 5, 1996, pp. 855-862. doi:10.1007/BF02666649

has been cited by the following article:

• TITLE: ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

  AUTHORS: Satoshi Yamauchi, Yoh Imai

  KEYWORDS: ZnO; Ti2O3; Plasma-Assisted Epitaxy; Photoluminescence; Free-Exciton; Bound-Exciton

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.2 No.3, September 25, 2013

  ABSTRACT: Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340°C using Ti2O3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.