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J. B. Danner and J. M. Vohs, “Surface Reactions during the Growth of SiO2 Thin Films on Si(100) Using Tetraethoxysilane,” Langmuir, Vol. 10, No. 9, 1994, pp. 3116-3121. doi:10.1021/la00021a040

has been cited by the following article:

• TITLE: ATR-FTIR and XPS Evaluation of Alkyl Immobilization by Hydrosilylation on n-Si(111) for Photoelectrochemical Cell Electrode

  AUTHORS: Toshihito Ohtake

  KEYWORDS: ATR-FTIR; XPS; Si Surface; Hydrosilylation; Immobilization; Photoelectrochemical Cell

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.3 No.3A, September 25, 2013

  ABSTRACT: An electrode development was needed with high efficiency and low costs as next generation solar cells. We attempted the electrode fabrication for a photoelectrochemical cell by immobilizing functional groups on a n-Si(111) surface. The immobilization was applied by hydrosilylation terminated with ester (hydrophobic) or carbonyl (hydrophilic) group. Results confirmed the immobilization on the Si surface by measuring ATR-FTIR and XPS.