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E. Guillotel, M. Ravaro, F. Ghiglieno, M. Savanier, I. Favero, S. Ducci and G. Leo, “GaAs/AlOx Nonlinear Waveguides for Infrared Tunable Generation,” In: K. Y. Kim, Ed., Advances in Optical and Photonic Devices, Chapter 8, Croatia, 2010, pp. 137-160. doi:10.5772/7144

has been cited by the following article:

• TITLE: FDTD Simulation of Three Photon Absorption and Realization of NAND Gate with GaAs Wire Waveguide

  AUTHORS: Ivy Dutta, Anirban Roy Chowdhury, Dharmadas Kumbhakar

  KEYWORDS: Three Photon Absorption; Fifth Order Nonlinearity; FDTD; Full Vector Finite Difference Method; Pump Beam and Probe Beam

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.5, August 26, 2013

  ABSTRACT: GaAs has high three photon absorption (3PA) co-efficient at mid-infrared wavelength like2.2mm and waveguides can be formed with this material like silicon nano-wires. It is shown that three-photon-absorption in GaAs wire waveguide can be utilized to form NAND gate. Three-photon-absorption is incorporated in one-dimensional Finite Difference Time Domain (FDTD) equations. The evolution of a probe pulse under the influence of a pump pulse through crossabsorption in a waveguide is investigated using FDTD simulation, where the dominant process is nonlinear three-photon-absorption. Output probe power dependence on input pump power shows that GaAs waveguide NAND gate has higher extinction ratio in comparison to NAND gate using two-photon-absorption in silicon waveguide.