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N. A. Torkhov, V. G. Bozhkova, I. V. Ivonin and V. A. Novikov, “Determination of the Fractal Dimension for the Epitaxial n-GaAs Surface in the Local Limit,” Semiconductors, Vol. 43, No. 1, 2009, pp. 33-41. doi:10.1134/S1063782609010084

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• TITLE: The Study of Different Structuring Techniques for Creation of Non-Evaporable Getters

  AUTHORS: Anton Boyko, Dahir Gaev, Sergei Timoshenkov, Yuri Chaplygin, Vladimir Petrov

  KEYWORDS: Non-Evaporable Getters; MEMS; Structuring; Magnetron Sputtering; Electrodeposition; Porous Silicon

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.8A, August 19, 2013

  ABSTRACT: The results of observation of different structuring techniques of thin metal layers applied in micro system technologies are presented. The Ti V getter films formed by magnetron sputtering have been explored using scanning electron and atomic-force microscopy, Brunauer-Emmett-Teller method, thermogravimetric analysis and fractal geometry. The film sorption capacity for hydrogen given by thermogravimetry was of 7.7 m3·Pa·g-1. To estimate the effective surface area, the fractal geometry tools were used and the calculated value of the specific surface area was about 155 m2/m3. The second object under investigation was a structure composed of micro- and mesoporous silicon and copper layer deposited electrochemically on the pore walls. Porous silicon when coupled with a reactive metal or alloy is expected to be an effective getter for micro system techniques. The use of porous silicon and specific conditions of depositions allows to form the structure of complex fractal type with a specific surface area of 167 m2/cm3.