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J. T. Wang, D. S. Guo, G. L Zhao, J. C. Chen, Z. W. Sun and A. Ignatiev, “Graphene-Semiconductor Quantum Well with Asymmetric Energy Gaps,” World Journal of Condensed Matter Physics, Vol. 3, No. 1, 2013, pp. 67-72. doi:10.4236/wjcmp.2013.31012

has been cited by the following article:

• TITLE: Energy Structure of Two-Dimensional Graphene-Semiconductor Quantum Dot

  AUTHORS: Jin Tong Wang, Guang-Lin Zhao, Diola Bagayoko, Dong-Sheng Guo, Jincan Chen, Zhiwei Sun

  KEYWORDS: Graphene; Quantum Dot; Dirac Equation; Semiconductor; Energy Levels

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.3 No.3, August 14, 2013

  ABSTRACT: Graphene is a newly discovered material that possesses unique electronic properties. It is a two-dimensional singlelayered sheet in which the electrons are free and quasi-relativistic. These properties may open a door for many new electronic applications. In this paper we proposed a flat 2-dimensional circular graphene-semiconductor quantum dot. We have carried out theoretical studies including deriving the Dirac equation for the electrons inside the graphene-semiconductor quantum dot and solving the equation. We have established the energy structure as a function of the rotational quantum number and the size (radius) of the dot. The energy gap between the energy levels can be tuned with the radius of the quantum dot. It could be useful for quantum computation and single electron device application.