Article citationsMore>>

L. I. Fedina and A. L. Aseev, “Atomic Mechanisms of Clustering of Intrinsic Point Defects in Si,” In: A. L. Aseev, Ed., Nanotechnology in Semiconductor Electronics, Sibirean Branch Russian Academy of Sciences, Novosibirsk, 2004, pp. 179-201. http://85.142.23.144/packages/mifi/5E6AE615-986F-4DE6-8BAB-1190A19D7E93/1.0.0.0/15.pdf

has been cited by the following article:

• TITLE: Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si

  AUTHORS: Kurbangali B. Tynyshtykbaev, Talant Aitmukan, Ainur T. Issova, Bagdat A. Rakhymetov, Mukhtar A. Yeleuov, Serekbol Zh. Tokmoldin

  KEYWORDS: Porous Silicon; Point Defects; Self-Organization; Nanostructuring

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.8A, August 14, 2013

  ABSTRACT: Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.