TITLE:
Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si
AUTHORS:
Kurbangali B. Tynyshtykbaev, Talant Aitmukan, Ainur T. Issova, Bagdat A. Rakhymetov, Mukhtar A. Yeleuov, Serekbol Zh. Tokmoldin
KEYWORDS:
Porous Silicon; Point Defects; Self-Organization; Nanostructuring
JOURNAL NAME:
Materials Sciences and Applications,
Vol.4 No.8A,
August
14,
2013
ABSTRACT: Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.