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O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov and B. Voigtlander, “Silicon-Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electricalproperties,” Semiconductors, Vol. 34, No. 11, 2000, pp. 1229-1247. doi:10.1134/1.1325416

has been cited by the following article:

• TITLE: Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si

  AUTHORS: Kurbangali B. Tynyshtykbaev, Talant Aitmukan, Ainur T. Issova, Bagdat A. Rakhymetov, Mukhtar A. Yeleuov, Serekbol Zh. Tokmoldin

  KEYWORDS: Porous Silicon; Point Defects; Self-Organization; Nanostructuring

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.8A, August 14, 2013

  ABSTRACT: Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.