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K. B. Tynyshtykbaev, Yu. A. Ryabikin, S. J. Tokmoldin, B. A. Rakymetov and T. Aytmukan, “Dynamics of the Formation of the Mosaic Structure of Porous Silicon at Long Anodic Etching in Electrolytes with Internal Power Source,” Physics of the Solid State, Vol. 53, No. 8, 2011, pp. 1575-1580. doi:10.1134/S1063783411080312

has been cited by the following article:

• TITLE: Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si

  AUTHORS: Kurbangali B. Tynyshtykbaev, Talant Aitmukan, Ainur T. Issova, Bagdat A. Rakhymetov, Mukhtar A. Yeleuov, Serekbol Zh. Tokmoldin

  KEYWORDS: Porous Silicon; Point Defects; Self-Organization; Nanostructuring

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.8A, August 14, 2013

  ABSTRACT: Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.