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K. B. Tynyshtykbaev, Yu A. Ryabikin, S. J. Tokmoldin and R. B. Vermenichev, “Surface of the Porous Silicon Received in Electrolyte with an Internal Source of a Current,” Materials Today, Vol. 13, No. 11, 2010, p. 3. http://digital.materialstoday.com//launch.aspx?eid=81d97740-a77f-4f0b-a164-628df6b04425

has been cited by the following article:

• TITLE: Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si

  AUTHORS: Kurbangali B. Tynyshtykbaev, Talant Aitmukan, Ainur T. Issova, Bagdat A. Rakhymetov, Mukhtar A. Yeleuov, Serekbol Zh. Tokmoldin

  KEYWORDS: Porous Silicon; Point Defects; Self-Organization; Nanostructuring

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.8A, August 14, 2013

  ABSTRACT: Self-organization processes in semiconductor materials on the example of nanostructuring of por-Si at long anodic etching of p-type Si in the electrolyte with internal source of the current are shown. In conditions of a “soft” etching of the Si point defects are formed and in the subsequently occurs their spatial-temporal ordering. This leads to the ordering pores and the nanostructuring of por-Si. Self-organization mechanism of Si nanocrystallites islets is described by the effects of the elastically-deformative, defectively-deformative and capillary-fluctuation forces.