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E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran, C. Cao, W. Knap and K. O. Kenneth, IEEE Journal of Solid-State Circuits, Vol. 45, No. 8, 2010, pp.1554-1564. doi:10.1109/JSSC.2010.2049793

has been cited by the following article:

• TITLE: Generation and Shaping of Soliton-Like Pulses along Resonant Tunneling Diodes NMOS Varactors Lattice

  AUTHORS: Yerima Klofaï, Bernard Z. Essimbi

  KEYWORDS: Accumulation-Mode MOS; Soliton-Like Pulse Generation and Shaping; Resonant Tunneling Diode; Active Nonlinear Electrical Lattice; Expanded KdV Equation

  JOURNAL NAME: Journal of Modern Physics, Vol.4 No.8, August 13, 2013

  ABSTRACT: The characteristics of N-type accumulation-mode MOS (NMOS) varactors line periodically loaded with resonant tunneling diodes (RTDs) are used for soliton-like pulses generation and shaping. The problem of wide pulse breaking up into multiple pulses rather than a single is solved. Applying perturbative analysis, we show that the dynamics of the nonlinear transmission line (NLTL) is reduced to expanded Korteweg-de Vries (KdV) equation. Moreover, numerical integration of nonlinear differential and difference equations that result from the mathematical analysis of the line is discussed. As results, NLTL can simultaneously sharpen both leading and trailing of pulse edges and one could obtain a rising and sharpening step pulse.