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A. Mahorowala and H. Sawin, “Etching of Polysilicon in Inductively Coupled Cl2 and HBr Discharges. IV. Calculation of Feature Charging in Profile Evolution,” Journal of Vacuum Science and Technology, Vol. B20, No. 3, 2002, pp. 1084-1095.

has been cited by the following article:

• TITLE: Three-Dimensional Simulations with Fields and Particles in Software and Inflector Designs

  AUTHORS: Branislav Radjenović, Marija Radmilović-Radjenović, Petar Beličev

  KEYWORDS: Fields; Particles; Simulations; Finite Elements; Inflector; Profile Evolution; Level Set Method

  JOURNAL NAME: Journal of Software Engineering and Applications, Vol.6 No.8, July 26, 2013

  ABSTRACT: Particles and fields represent two major modeling paradigms in pure and applied science at all. In this paper a methodology and some of the results for three-dimensional (3D) simulations that include both field and particle abstractions are presented. Electromagnetic field calculations used here are based on the discrete differential form representation of the finite elements method, while the Monte Carlo method makes foundation of the particle part of the simulations. The first example is the simulation of the feature profile evolution during SiO2 etching enhanced by Ar + /CF4 non-equilibrium plasma based on the sparse field method for solving level set equations. Second example is devoted to the design of a spiral inflector which is one of the key devices of the axial injection system of the VINCY Cyclotron.