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Y. A. Chang, C. L. Yu, I. T. Wu, H. C. Kuo, T. C. Lu, F. I. Lai, L. W. Laih, L. H. Laih and S. C. Wang, “Design and Fabrication of Temperature-Insensitive InGaP-InGaAIP Resonant-Cavity Light-Emitting Diodes,” 2006 IEEE Photonics Technology Letters, Vol. 18, No. 16, 1690. doi:10.1109/LPT.2006.879931

has been cited by the following article:

• TITLE: Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes

  AUTHORS: Jianjun Li, Tao Liu, Jiachun Li, Xuan Ya

  KEYWORDS: 650 nm; RCLED; MOCVD; DBR

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.2B, July 23, 2013

  ABSTRACT: High efficiency 650 nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al 0.5Ga 0.5 As/Al As is used for the distributed Bragg reflectors (DBRs), and GaInP/AlGaInP multiple-quantum wells for the active region. Two RCLED samples have been fabricated, one with a cladding layer cavity and the other without. Experimental results show that the cladding layer cavity can improve the internal quantum efficiency effectively, so that an external quantum efficiency of 7.4% at 20 mA is reached. Meanwhile, the sample with cladding layer cavity also shows a spectral stability as the injected current changing from 20 mA to 100 mA.