TITLE:
Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser
AUTHORS:
Mohammad Reza Farjadian, Hassan Kaatuzian, Iman Taghavi
KEYWORDS:
Transistor Laser; Quantum Well; Long Wavelength; Optical Confinement Factor
JOURNAL NAME:
Optics and Photonics Journal,
Vol.3 No.2B,
July
22,
2013
ABSTRACT: In this paper we investigate the effects of base width
variation on performance of long wavelength transistor laser. In our structure
with increasing the base width, the cut off frequency increases until 367 nm
with 24.5 GHz and then abruptly fall. In 100 nm base width, we have 17.5 GHz
cut off frequency, and overall ac performances become optimized, although,
other parameters like optical losses and threshold current density are not
optimized.