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Y. Huang, J. H. Ryou and R. D. Dupuis “Epitaxial Structure Of Long – Wavelength InAlGaAs/InP Transistor Laser,” IEEE Jurnal of Quantum electronic, Vol. 47, NO. 5, 2011.

has been cited by the following article:

• TITLE: Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser

  AUTHORS: Mohammad Reza Farjadian, Hassan Kaatuzian, Iman Taghavi

  KEYWORDS: Transistor Laser; Quantum Well; Long Wavelength; Optical Confinement Factor

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.2B, July 22, 2013

  ABSTRACT: In this paper we investigate the effects of base width variation on performance of long wavelength transistor laser. In our structure with increasing the base width, the cut off frequency increases until 367 nm with 24.5 GHz and then abruptly fall. In 100 nm base width, we have 17.5 GHz cut off frequency, and overall ac performances become optimized, although, other parameters like optical losses and threshold current density are not optimized.