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P. K. Kashkarov, E. A. Konstantinova, S. A. Petrova, et al., “On the Temperature Dependence of Photoluminescence of Porous Silicon,” Semiconductors, Vol. 31, No. 6, 1997, pp.745-748. doi:10.1134/1.1187234

has been cited by the following article:

• TITLE: Photoluminescence of Por-Si with High-ordered Mosaic Structure Received at Long Anodic Etching p-Si (100) in the Electrolyte with an Internal Current Source

  AUTHORS: K. B. Tynyshtykbaev, V. B. Glazman, M. A. Yeleuov, A. T. Isova, B. A. Rakymetov, D. Muratov, S. Z.Tokmoldin

  KEYWORDS: Photoluminescence Spectra; Thermal Annealing; Emitting Centershydrides; Oxides; Mosaic Structure; Nanocrystallite; Por-Si

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.2B, July 22, 2013

  ABSTRACT: Photoluminescence spectra and nature of light-emitting centers of a porous silicon (por-Si) samples are given. The por- Si samples had high-ordered mosaic structure, which was received under long anodic etching p-Si(100) in electrolyte with an internal current source. The photoluminescence spectra were monitored at room temperature before and after annealing in air and vacuum. Comparative analysis of photoluminescence spectra of the por-Si samples annealed at different temperatures in air and vacuum shows that the thermal annealing conditions has significant effect on the intensity and spectral content of the photoluminescence spectra. The nature of the luminescence emission centers at different temperatures and annealing conditions was discussed.