TITLE:
Photoluminescence of Por-Si with High-ordered Mosaic Structure Received at Long Anodic Etching p-Si (100) in the Electrolyte with an Internal Current Source
AUTHORS:
K. B. Tynyshtykbaev, V. B. Glazman, M. A. Yeleuov, A. T. Isova, B. A. Rakymetov, D. Muratov, S. Z.Tokmoldin
KEYWORDS:
Photoluminescence Spectra; Thermal Annealing; Emitting Centershydrides; Oxides; Mosaic Structure; Nanocrystallite; Por-Si
JOURNAL NAME:
Optics and Photonics Journal,
Vol.3 No.2B,
July
22,
2013
ABSTRACT: Photoluminescence
spectra and nature of light-emitting centers of a porous
silicon (por-Si) samples are given. The por- Si samples had high-ordered mosaic structure, which was received under long anodic etching p-Si(100) in electrolyte with an internal current
source. The photoluminescence spectra were monitored at room temperature before and after annealing in
air and vacuum. Comparative analysis of photoluminescence spectra of the por-Si samples annealed at different temperatures in air and
vacuum shows that the thermal annealing conditions has significant effect on the intensity
and spectral content of the photoluminescence spectra. The nature of the luminescence emission centers at
different temperatures and annealing conditions was discussed.