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H. Soto, D. Erasme, G. C. Guekos, et a1., “5-Gb/s XOR Optical Gate Based on Cross-Polarization Modulation in Semiconductor Optical Amplifiers,” IEEE Photonics Technology Letters, Vol. 13, No. 4, 2001, pp. 335-337. doi:10.1109/68.917843

has been cited by the following article:

• TITLE: Nonlinear Polarization Rotation Characteristic Phenomenon in a Bulk Semiconductor Optical Amplifier

  AUTHORS: Xianghua Feng, Jiarong Ji, Guomin Zhang

  KEYWORDS: Strained Bulk SOA; Nonlinear Polarization Rotation; Phase Difference; Polarization Azimuth

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.2B, July 22, 2013

  ABSTRACT: The phenomena of polarization rotation induced by self-modulation in semiconductor optical amplifier (SOA) are analyzed theoretically. The relationship between polarization parameters and gain as well as phase is obtained by the correlation parameter of ellipse polarization and SOA nonlinearity polarization rotation theory. The experiment employs polarizer drive by walking electromotor and power meter, the light power of 360 degree is measured. The transformation law of output polarization power components is found for obvious polarization rotation in the selected coordinate axes based on connection of polarization state in difference axes. Using this law make the manipulation easily on getting ideal polarization state. It can offer a fine method to realize all-optical switch and other logic elements in experiment. This work is of great significance for the applications of SOA nonlinear polarization rotation at high-speed all-optical signal processing and all-optical logic gate.