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J. W. Lee, J. Hong, C. R. Abernathy, E. S. Lambers, S. J. Pearton, W. S. Hobson and F. Ren,“Cl₂/Ar Plasma Etching of Binary, Ternary, and Quaternary In-Based Compound Semiconductors,” Journal of Vacuum Science & Technology B, Vol. 14, No. 4, 1996, pp. 2567-2573. doi:10.1116/1.588769

has been cited by the following article:

• TITLE: A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl2F2/O2 and H2/CH4

  AUTHORS: B. Cakmak, M. Biber, T. Karacali, C. Duman

  KEYWORDS: Diode Lasers; Fabrication; Two-Section; Ridge-Waveguide; CCl2F2/O2 and H2/CH4

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.2B, July 18, 2013

  ABSTRACT: We report comparatively on fabrication of two-section ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode lasers. Gas mixtures of CCl2F2/O2 and H2/CH4 were used to form ridge-waveguide on the lasers with InP-based material structures. As known, chlorine- and hydro-carbon based gases are used to fabricate ridge-waveguide structures. Here, we show the difference between the structures obtained by using the both gas mixtures in which surface and sidewall structures as well as performance of the lasers were analysed using scanning electron microscopy. It is demonstrated that gas mixtures of CCl2F2/O2 highly deteriorated the etched structures although different flow rates, rf powers and base pressures were tried. We also show that the structures etched with H2/CH4 gas mixtures produced much better results that led to the successful fabrication of two-section devices with ridge-waveguide. The lasers fabricated using H2/CH4 were characterized using output power-current (P-I) and spectral results.