TITLE:
A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl2F2/O2 and H2/CH4
AUTHORS:
B. Cakmak, M. Biber, T. Karacali, C. Duman
KEYWORDS:
Diode Lasers; Fabrication; Two-Section; Ridge-Waveguide; CCl2F2/O2 and H2/CH4
JOURNAL NAME:
Optics and Photonics Journal,
Vol.3 No.2B,
July
18,
2013
ABSTRACT: We report comparatively on fabrication of two-section
ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode lasers. Gas mixtures of
CCl2F2/O2 and H2/CH4 were used to form ridge-waveguide on the lasers with InP-based material
structures. As known, chlorine- and hydro-carbon based gases are used to
fabricate ridge-waveguide structures. Here, we show the difference between the
structures obtained by using the both gas mixtures in which surface and
sidewall structures as well as performance of the lasers were analysed using
scanning electron microscopy. It is demonstrated that gas mixtures of CCl2F2/O2 highly deteriorated the etched structures although different flow rates, rf
powers and base pressures were tried. We also show that the structures etched
with H2/CH4 gas mixtures produced much better
results that led to the successful fabrication of two-section devices with
ridge-waveguide. The lasers fabricated using H2/CH4 were characterized using output power-current (P-I) and spectral results.