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J. Liu, X. M. Meng, Y. Jiang, C. S. Lee, I. Bello and S. T. Lee, “Gallium Nitride Nano Wires Doped with Silicon,” Applied Physics Letters, Vol. 83, No. 20, 2003, pp. 4241-4243. doi:10.1063/1.1628820

has been cited by the following article:

• TITLE: Growth and Improvement of ZnO Nanostructure Using Aged Solution by Flow Coating Process

  AUTHORS: Kasimayan Uma, Solaiappan Ananthakumar, Ramalinga Viswanathan Mangalaraja, Tetsuo Soga, Takashi Jimbo

  KEYWORDS: ZnO Nanostructure; Flow Coating; Photo Luminescence (PL)

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.3 No.3, July 17, 2013

  ABSTRACT: ZnO nanostructures were prepared on corning glass substrate by flow coating process with different annealing temperature from 100?C to 600?C. Fresh and two days aged solutions were used to investigate the growth behavior and to evaluate the nanostructure of ZnO. The effect of preparation conditions on the deposition of ZnO nanostructure was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman, and photoluminescence spectroscopy (PL). The results indicated that the solution aging condition and annealing temperature have a strong influence on the morphology and structural properties of the ZnO nanostructure. The solution aged after two days shows the different morphologies compared with the freshly prepared solution.