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W. J. Royea, A. Juang and N. S. Lewis, “Preparation of Air-Stable, Low Recombination Velocity Si(111) Surfaces Through Alkyl Termination,” Applied Physics Letters, Vol. 77, No. 13, 2000, pp. 1988-1990. doi:10.1063/1.1312203

has been cited by the following article:

• TITLE: Methyl Termination and ATR-FTIR Evaluation of n-Si(111) Electrode towards Photoelectrochemical Cell Fabrication

  AUTHORS: Toshihito Ohtake

  KEYWORDS: Methyl Termination; ATR-FTIR; Semiconductor Electrode; Si; Photoelectrochemical Cell

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.3 No.3, July 10, 2013

  ABSTRACT: We confirmed methyl termination on n-Si(111) surface by ATR-FTIR measurement, which was fabricated by a photo chloro-reaction and its methylation. The coverage of the methylation was about 63.7%, and the surface was not re-terminated by hydrogen. Photoelectrochemical properties of the n-Si(111) were measured as an electrode for a photoelectrochemical cell, and an onset potential obtaining photocurrent for the methyl terminated n-Si(111) electrode was observed as negative shift at 70 mV comparing with that of the hydrogen terminated n-Si(111) electrode. Therefore, the negative shift would be expected for improving open circuit voltage towards solar cell.