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O. A. Lafi, M. M. A. Imran and M. K. Abdullah, “Chemical Bond Approach to Glass Transition Temperature and Crystallization Activation Energy in Se₉₀In_10-xSn_x (2 <= x<= 8) Semiconducting Glasses,” Materials Chemistry and Physics, Vol. 108, No. 1, 2008, pp. 109-114. doi:10.1016/j.matchemphys.2007.09.011

has been cited by the following article:

• TITLE: The Effect of Compositional Variation on Physical Properties of Te9Se72Ge19-XSbx (X = 8, 9, 10, 11, 12) Glassy Material

  AUTHORS: Anant Vidya Nidhi, Vivek Modgil, V. S. Rangra

  KEYWORDS: Quaternary Chalcogenide Glass; Heat of Atomization; Mean Bond Energy; Glass Transition Temperature

  JOURNAL NAME: New Journal of Glass and Ceramics, Vol.3 No.3, July 9, 2013

  ABSTRACT: The quaternary chalcogenide glass Te9Se72Ge19-xSbx (x = 8, 9, 10, 11, 12) has been prepared by the melt quench technique. The material fragility increases due to decrease in degree of cross linking in glass matrix as the Sb content increases. The heat of atomization decreases due to lower value of heat of atomization of antimony. The glass transition temperature is calculated by Tichy-Ticha and Lankhorst approaches. The glass seems to have high value of glass transition temperature as per theoretical calculations and is monotonically decreasing with increasing Sb content because increasing concentration of Sb reduces the cohesive energy and mean bond energy of the material.