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K. Lal and G. Bhagavannarayana, “A High-Resolution Diffuse X-Ray Scattering Study of Defects in Dislocation-Free Silicon Crystals Grown by the Float-Zone Method and Comparison with Czochralski-Grown Crystals,” Journal of Applied Crystallography, Vol. 22, No. 3, 1989, pp. 209-215. doi:10.1107/S0021889888014062

has been cited by the following article:

• TITLE: Second Harmonic Generation in Some Donor-Acceptor Substituted Chalcone Derivatives

  AUTHORS: P. S. Patil, V. M. Bhumannavar, M. S. Bannur, Harish N. Kulkarni, G. Bhagavannarayana

  KEYWORDS: Nonlinear Optical Materials; Organic Compounds; Crystal Growth; Second Harmonic Generation; TGA/DTA

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.3 No.3, July 3, 2013

  ABSTRACT: A series of five chalcone derivatives with different substituents in para and meta posions have been synthesized, and single crystals were successfully grown in aceton solution by slow evaporation solution growth technique (SESGT). Single crystal X-ray studies revealed that all the crystals crystallized in noncentrosymmetric space group with their molecular dipoles perfectly aligned in a direction-favorable for large nonlinear optical effects. Kurtz powder tests revealed that all five materials have second-harmonic-generating properties with maximum efficiencies of approximately 14 times that of urea standard. UV-vis-NIR spectroscopy and thermogravimetric analyses are also presented for all of the reported materials. Among the five chalcones, high quality single crystals of 4-Methoxy-4'-chlorochalcone were grown by SESGT, and its crystalline perection were studied by using a high resolution X-ray diffractometry (HRXRD).