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S.-H. Yen, M.-L. Chen and Y.-K. Kuo, “Gain and Threshold Properties of InGaAsN/GaAsN Material System for 1. 3-μm Semiconductor Lasers,” Optics & Laser Technology, Vol. 39, No. 7, 2007, pp. 1432-1436. doi:10.1016/j.optlastec.2006.10.003

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• TITLE: Modeling Multiple Quantum Well and Superlattice Solar Cells

  AUTHORS: Carlos I. Cabrera, Julio C. Rimada, Maykel Courel, Luis Hernandez, James P. Connolly, Agustín Enciso, David A. Contreras-Solorio

  KEYWORDS: Quantum Well; Strain in Solids; Solar Cell; Conversion Efficiency; Modeling

  JOURNAL NAME: Natural Resources, Vol.4 No.3, June 25, 2013

  ABSTRACT: The inability of a single-gap solar cell to absorb energies less than the band-gap energy is one of the intrinsic loss mechanisms which limit the conversion efficiency in photovoltaic devices. New approaches to “ultra-high” efficiency solar cells include devices such as multiple quantum wells (QW) and superlattices (SL) systems in the intrinsic region of a p-i-n cell of wider band-gap energy (barrier or host) semiconductor. These configurations are intended to extend the absorption band beyond the single gap host cell semiconductor. A theoretical model has been developed to study the performance of the strain-balanced GaAsP/InGaAs/GaAs MQWSC, and GaAs/GaInNAs MQWSC or SLSC. Our results show that conversion efficiencies can be reached which have never been obtained before for a single-junction solar cell.