Article citationsMore>>

P. R. Griffin, J. Barnes, K. W. J. Barnham, G. Haarpaintner, M. Mazzer, C. Zanotti-Fregonara, E. Grunbaum, C. Olson, C. Rohr, J. P. R. David, J. S. Roberts, R. Gray and M. A. Pate, “Effect of Strain Relaxation on Forward Bias Dark Currents in GaAs/InGaAs Multiquantum Well p-i-n Diodes,” Journal of Applied Physics, Vol. 80, No. 10, 1996, pp. 5815-5820. doi:10.1063/1.363574

has been cited by the following article:

• TITLE: Modeling Multiple Quantum Well and Superlattice Solar Cells

  AUTHORS: Carlos I. Cabrera, Julio C. Rimada, Maykel Courel, Luis Hernandez, James P. Connolly, Agustín Enciso, David A. Contreras-Solorio

  KEYWORDS: Quantum Well; Strain in Solids; Solar Cell; Conversion Efficiency; Modeling

  JOURNAL NAME: Natural Resources, Vol.4 No.3, June 25, 2013

  ABSTRACT: The inability of a single-gap solar cell to absorb energies less than the band-gap energy is one of the intrinsic loss mechanisms which limit the conversion efficiency in photovoltaic devices. New approaches to “ultra-high” efficiency solar cells include devices such as multiple quantum wells (QW) and superlattices (SL) systems in the intrinsic region of a p-i-n cell of wider band-gap energy (barrier or host) semiconductor. These configurations are intended to extend the absorption band beyond the single gap host cell semiconductor. A theoretical model has been developed to study the performance of the strain-balanced GaAsP/InGaAs/GaAs MQWSC, and GaAs/GaInNAs MQWSC or SLSC. Our results show that conversion efficiencies can be reached which have never been obtained before for a single-junction solar cell.