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Y. Ye and Y. Cao, “Random Variability Modeling and Its Impact on Scaled CMOS Circuits,” Journal of Computational Electronics, Vol. 9, No. 3-4, 2010, pp. 108-113. doi:10.1007/s10825-010-0336-5

has been cited by the following article:

• TITLE: Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

  AUTHORS: Viranjay M. Srivastava, Kalyan S. Yadav, Ghanashyam Singh

  KEYWORDS: Capacitive Model, Double-Gate MOSFET, DP4T Switch, Isolation, Radio Frequency, RF Switch, S-Parameter and VLSI

  JOURNAL NAME: Wireless Engineering and Technology, Vol.2 No.1, January 30, 2011

  ABSTRACT: In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.