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M. A. Dal Santos, A. C. Antunes, C. Ribeiro, C. P. F. Borges, S. R. M. Antunes, A. J. Zara and S. A. Pianaro, “Electric and Morphologic Properties of SnO2 Films Prepared by Modified Sol-Gel Process,” Materials Letters, Vol. 57, 2003, pp. 4378-4381. doi:10.1016/S0167-577X(03)00328-8

has been cited by the following article:

• TITLE: Heterostructure Solar Cells Based on Sol-Gel Deposited SnO2 and Electrochemically Deposited Cu2O

  AUTHORS: Akito Fukuda, Masaya Ichimura

  KEYWORDS: Sol-Gel Deposition; Electrochemical Deposition; Cu2O; SnO2; Solar Cell

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.6A, June 13, 2013

  ABSTRACT: To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10－2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.