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T. M. Racheva and G. W. Critchlow, “SnO2 Thin Films Prepared by the Sol-Gel Process,” Thin Solid Films, Vol. 292, 1997, pp. 299-302. doi:10.1016/S0040-6090(96)08956-0

has been cited by the following article:

• TITLE: Heterostructure Solar Cells Based on Sol-Gel Deposited SnO2 and Electrochemically Deposited Cu2O

  AUTHORS: Akito Fukuda, Masaya Ichimura

  KEYWORDS: Sol-Gel Deposition; Electrochemical Deposition; Cu2O; SnO2; Solar Cell

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.6A, June 13, 2013

  ABSTRACT: To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10－2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.