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R. Thielsch, A. Gatto, J. Heber and N. Kaiser, “A Comparative Study of the UV Optical and Structural Proper ties of SiO2, Al2O3, and HfO2 Single Layers Deposited by Reactive Evaporation, Ion-Assisted Deposition and Plasma Ion-Assisted Deposition,” Thin Solid Films, Vol. 410, No. 1-2, 2002, pp. 86-93. doi:10.1016/S0040-6090(02)00208-0

has been cited by the following article:

• TITLE: Microstructure and 355 nm Laser-Induced Damage Characteristics of Al2O3 Films Irradiated with Oxygen Plasma under Different Energy

  AUTHORS: Dongping Zhang, Yan Li, Jingting Luo, Zhuanghao Zheng, Guangxing Liang, Xingmin Cai, Fan Ye, Ping Fan, Jianjun Huang

  KEYWORDS: Thin Film; Laser-Induced Damage; Electron Beam Evaporation; Plasma Irradiation

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.2, June 5, 2013

  ABSTRACT: Al2O3 films were prepared using electron beam evaporation at room temperature. The samples were irradiated with oxygen plasma under different energy. The variations in average surface defect density and root mean square (RMS) surface roughness were characterized using an optical microscope and an atomic force microscope. Surface average defect density increased after plasma treatment. The RMS surface roughness of the samples decreased from 1.92 nm to 1.26 nm because of surface atom restructuring after oxygen plasma conditioning. A 355 nm laser-induced damage experiment indicated that the as-grown sample with the lowest defect density exhibited a higher laser-induced damage threshold (1.12 J/cm2) than the other treated samples. Laser-induced damage images revealed that defect is one of the key factors that affect laser-induced damage on Al2O3 films.