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B. Schmidt, A. Mücklich, L. Rontzsch and K.-H. Heining, “How Do High Energy Heavy Ions Shape Ge Nanoparticles Embedded in SiO₂?” Nuclear Instruments and Methods in Physics Research B, Vol. 257, No. 1-2, 2007, pp. 30-32. doi:10.1016/j.nimb.2006.12.152

has been cited by the following article:

• TITLE: The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals

  AUTHORS: Alejandra López-Suárez

  KEYWORDS: Silicon Nitride; Silicon Nanocrystals; Photoluminescence; RBS; ERDA

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.3 No.2, May 23, 2013

  ABSTRACT: Silicon nanocrystals embedded in silicon nitride films were irradiated with Si-ions at 8 MeV in order to modify their optical response. The samples were characterized by means of Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis, High-Resolution Transmission Electronic Microscopy and Photoluminescence analysis. It was found a blue-shift in the photoluminescence emission from the as-grown films after they were irradiated with high energetic silicon ions. According to the quantum confinement theory, this fact is related to a decrease in size of the silicon nanocrystals, which means that a higher silicon fluence irradiation is related with a diminishing in silicon nanocrystal size.