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S. V. Bulyarsky, Y. V. Rud, L. N. Vostrezova, A. S. Kagarmanov and O. A. Trifonov, “Tunneling Recombination in Semiconductor Structures with Nanodisorder,” Physics and Technology of Semiconductors (Russia), Vol. 43, No. 4, 2009, pp. 460-466.

has been cited by the following article:

• TITLE: High Moisture Sensitivity of the Elements Based on Carbon Nanotubes Array

  AUTHORS: Sergei Bulyarsky, Vyacheslav Galperin, Levan Ichkitidze, Michael Ermakov, Alexander Pavlov, Yuri Shaman

  KEYWORDS: Carbon Nanotubes; Moisture-Sensitive Elements; Conductivity; Molecules Adsorption

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.5A, May 23, 2013

  ABSTRACT: The results of the research and development of the moisture-sensitive elements based on the carbon nanotubes (CNT) array are presented. It was shown that CNT arrays that were grown by low-temperature plasma enhanced chemical vapor deposition (PECVD) method on the planar Si structures exhibit extremely high moisture sensitivity. The structure resistance ratio in dry and moisture conditions exceed 400. Such relatively high change in resistances is conditioned by the pattern of change of the charge carrier’s conductivity between certain nanotubes in the bundle when water molecules adsorption occurs.