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M. Li, B. Zhang, J. Z. Wang, L. Q. Shi, H. S. Cheng, Y. Z. Wang, H. Y. Lv, T. Y. Yang, W. Wen and F. C. Hu, “EXAFS and SR-XRD Study on Mn Occupations in Zn1-xMnxO Diluted Magnetic Semiconductors,” Nuclear Instruments and Methods in Physics Research Section B, Vol. 269, No. 21, 2011, pp. 2610-2613. doi:10.1016/j.nimb.2011.07.094

has been cited by the following article:

• TITLE: XANES and XPS Study on Microstructure of Mn-Doped ZnO Films

  AUTHORS: B. Zhang, M. Li, J. Z. Wang, L. Q. Shi, H. S. Cheng

  KEYWORDS: ZnO-Based DMS; Mn Substitution; XANES; XPS

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.5, May 21, 2013

  ABSTRACT: Microstructure of ZnO:Mn films with various Mn concentration was investigated with XANES and XPS. The experimental results revealed a substitution of Mn in ZnO and also excluded the existence of Mn oxides or metallic manganese clusters. The substitutional Mn presented a divalent state and all the ZnO:Mn films were n-type. Room temperature ferromagnetism monotonously decreases with the decrease of the electron carrier concentration. The observed ferrmagnetism should come from the carrier-mediated exchange.