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M. Ivill, S. J. Pearton, Y. W. Heo, J. Kelly, A. F. Hebard and D. P. Norton, “Magnetization Dependence on Carrier Doping in Epitaxial ZnO Thin Films Co-Doped with Mn and P,” Journal of Applied Physics, Vol. 101, No. 12, 2007, Article ID: 123909. doi:10.1063/1.2739302

has been cited by the following article:

• TITLE: XANES and XPS Study on Microstructure of Mn-Doped ZnO Films

  AUTHORS: B. Zhang, M. Li, J. Z. Wang, L. Q. Shi, H. S. Cheng

  KEYWORDS: ZnO-Based DMS; Mn Substitution; XANES; XPS

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.5, May 21, 2013

  ABSTRACT: Microstructure of ZnO:Mn films with various Mn concentration was investigated with XANES and XPS. The experimental results revealed a substitution of Mn in ZnO and also excluded the existence of Mn oxides or metallic manganese clusters. The substitutional Mn presented a divalent state and all the ZnO:Mn films were n-type. Room temperature ferromagnetism monotonously decreases with the decrease of the electron carrier concentration. The observed ferrmagnetism should come from the carrier-mediated exchange.