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M. Amman, J. S. Lee, P. N. Luke, H. Chen, S. A. Awadalla, R. Redden and G. Bindley, “Evaluation of THMGrown CdZnTe Material for Large-Volume Gamma-Ray Detector Applications,” IEEE Transactions on Nuclear Science, Vol. 56, No. 3, 2009, pp. 795-799. doi:10.1109/TNS.2008.2010402

has been cited by the following article:

• TITLE: Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

  AUTHORS: Bo Gan, Tingcun Wei, Wu Gao, Huiming Zeng, Yann Hu

  KEYWORDS: CdZnTe; Detector; Low Noise; Front-End; Readout; CMOS

  JOURNAL NAME: Journal of Signal and Information Processing, Vol.4 No.2, May 8, 2013

  ABSTRACT: In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.