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T. Minami, “Transparent Conducting Oxide Semiconductors for Transparent Electrodes,” Semiconductor Science and Technology, Vol. 20, No. 4, 2005, pp. S35-S44. doi:10.1088/0268-1242/20/4/004

has been cited by the following article:

• TITLE: Microstructure Analysis and Properties of Anti-Reflection Thin Films for Spherical Silicon Solar Cells

  AUTHORS: Masato Kanayama, Takeo Oku, Tsuyoshi Akiyama, Youichi Kanamori, Satoshi Seo, Jun Takami, Yoshimasa Ohnishi, Yoshikazu Ohtani, Mikio Murozono

  KEYWORDS: Solar Cells; Spherical Silicon; Anti-Reflection Film; FTO; SnO2

  JOURNAL NAME: Energy and Power Engineering, Vol.5 No.2A, April 29, 2013

  ABSTRACT: Structure and properties of anti-reflection thin films of spherical silicon solar cells were investigated and discussed. Conversion efficiencies of spherical Si solar cells coated with F-doped SnO2 anti-reflection films were improved by annealing. Optical absorption and fluorescence of the solar cells increased after annealing. Lattice constants of F-doped SnO2 anti-reflection layers, which were investigated by X-ray diffraction, decreased after annealing. A mechanism of atomic diffusion of F in SnO2 was discussed. The present work indicated a guideline for spherical silicon solar cells with higher efficiencies.