TITLE:
XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition
AUTHORS:
N. Matsunami, H. Kakiuchida, M. Sataka, S. Okayasu
KEYWORDS:
Aluminum Nitride Film; Composition; Impurities; Atomic Structure; Surface Morphology; Optical Properties
JOURNAL NAME:
Advances in Materials Physics and Chemistry,
Vol.3 No.1A,
April
28,
2013
ABSTRACT: AlN thin films have been grown on R((1-12)
surface-cut)-Al2O3, SiO2-glass and C((001)
surface-cut)-Al2O3 substrates, by using a
reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN
film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering
spectroscopy (RBS) and it appears that XRD intensity does not show a linear
increase with the film thickness but a correlation with the stress, i.e., deviation of the lattice parameter
of the film from that of bulk. The film composition and impurities have been
analyzed by ion beam techniques. Effects of high-energy ion beams
are briefly presented on atomic structure (whether stress relaxation occurs or
not), surface morphology and optical properties.